The Research Of Optical Nonlinear Effects For Semiconductor Multiple Quantum Wells

Since the epitaxial growth technology (MOCVD and MBE) was born, the semiconductor quantum well-called "artificial atoms" attracted many researchers’ interesting. Because it has similar discrete levels to atomic vapors, some of properties for atomic gas can be introduced into the semiconductor quantum wells, and the semiconductor multiple quantum wells as solid state materials has many unique advantages such as relatively stable performance、small size and easy to integrate, which are the future development of optoelectronic devices needed. About the semiconductor quantum wells also has some reports, currently, but mainly concentrated in asymmetric semiconductor quantum well, the asymmetric system mainly via tunneling effect to form the desired band structure, and achieved some good results in the theoretical and experimental, for example electromagnetically induced transparency、optical amplification without inversion、slow light and light switch and so on. But in the study of optical nonlinear effects for symmetric multiple quantum well semiconductor is still rarely, in this thesis we mainly study the quantum coherence effects and applications of excitons levels for the period semiconductor multiple quantum wells, and Bragg-spaced semiconductor multiple quantum wells. More specifically, we theoretically investigate electromagnetically induced transparency、ultraslow optical soliton、highly efficient four-wave mixing、optical absorption-amplification and dispersion、and study of theoretically and experiment for Bragg-spaced semiconductor multiple quantum wells. The main content is as follows:(1) We demonstrate the electromagnetically induced transparency of three kinds of three-level structure e.g. A,(?) and V of excitons levels for semiconductor multiple quantum wells. And we obtained the results of theoretical calculations are agreement with the experimental results, with the relevant parameters.(2) We analyze the formation of ultraslow bright and dark optical solitons of three kinds of three-level structure e.g. A、(?) and V of excitons levels for semiconductor multiple quantum wells. And we study the formation of ultraslow optical solitons pairs of four-level scheme in semiconductor multiple quantum wells. We can obtain the group velocity of ultraslow optical soliton～10-4m/s.(3) We investigate the highly efficient four-wave mixing process of double-(?) type four-level in a semiconductor multiple quantum wells. The corresponding explicit analytical expressions for the input probe and generated four-wave mixing pulsed fields are derived by using of the probability amplitude equations and Maxwell’s equations. The four-wave mixing efficiency in the system can be adjusted by relevant paramenters; according to the analysis results we can get the maximum four-wave mixing efficiency about50%.(4) We present two kinds of four-level system e.g. double-A type and double-(?) type based on exciton levles in semiconductor multiple quantum wells, then discuss the absorption, amplification and dispersion properties of the two weaker pulsed fields by quantum coherent and interference effects between three-photon process and one-photon process. And we investigate the relevant parameters affects the characteristics, and we find that the relative phase can be used to control the absorption, amplification and dispersion, with the control period2π, it open a new road for phase adjusting the light switch. According to the discussion we can find that the dispersion compensation function can be implemented in semiconductor quantum wells system.(5) We study the Bragg-spaced semiconductor multiple quantum wells, first of all we theoretically give the formula photonic band gap in the near-resonant conditions, and analyze the band structure of near-resonant conditions. Secondly, we have grown different periods of InAsP/InP Bragg-spaced semiconductor quantum wells by MOCVD, and test PL and reflection spectrum of the sample at different temperature; we find that we can control the photonic bandgap of semiconductor by temperature. Then, we propose a new scheme of using the temperature to control the optical memory devices.In summary, these studies not only helps to understanding of the quantum coherence effect’s applications in quantum optics and quantum information for semiconductor multiple quantum wells, but also have a guiding role for implementation optical information storage and release, all-optical switching, slow light and dispersion compensation in semiconductor multiple quantum wells.