Optical Solitons Behavior In Semiconductor Quantum Wells Electromagnetically Induced Transparency Medium With The Coupling Of Longitudinal Optical Phonons

Since we are in the information age, the requirements of the transmission and the processing of the information are increasingly higher. As a new information carrier, soliton has many advantages than traditional carrier, such as, large capacity of communication transmission, little bit error, strong ability of resistance to electromagnetic interference, good secrecy performance and so on. Therefore, how to better realize the application of optical soliton in information transmission and processing is a current hot topic between the physical and information sciences. Fortunately, it is possible to realize the application of optical soliton in the communication device with the development technology of electromagnetically induced transparency(EIT) and the improvement of the semiconductor technology. By far, it is shown that optical solitons in EIT media usually have ultraslow group velocity which is promising used in information storage. More importantly, besides they have the same character division level and large electric moment with EIT media, semiconductor quantum wells also have the advantages on the controlling of coherent evolution and ease of integration, which is considered the most potential EIT media to realize the application of quantum devices. Optical solitons in semiconductor quantum well EIT medium, not only can use the advantages of optical solitons in information transmission and processing, but also can give full play to the application potential of the semiconductor quantum well in quantum devices. Therefore, the research of optical soliton behavior in the semiconductor quantum well, can provide a certain reference value for the practical application of information transmission and processing together quantum devices. The main content of this thesis is as follows.In the first chapter, we first introduce the theory, feature and phenomena of EIT. Subsequently, the structure, sort and the preparation methods of semiconductor quantum wells are represented. Last, we present our using study methods and give a briefly summary to our study results.In the second chapter, we study the solitons dynamical properties in a cascade-type three-level semiconductor quantum well. It is shown that with the increasing strength of the CCRLOP, the temporal bright optical soliton of the system can convert into a dark one. In another words, the evolvement between dark and bright soliton in the cascade-type semiconductor quantum well can be controlled by the strength of the CCRLOP. In addition, it is found that the group velocity of the soliton can also be controlled by the strength of CCRLOP and the control light.In the third chapter, we analytically study the dynamical properties of a temporal optical soliton under consideration of the high order effects and CCRLOP in an N type asymmetrical four-level semiconductor double quantum wells. The results reveal that when the strength of CCRLOP increases, the amplitude of the soliton shows a decrease-to-increase behavior. At fixed CCRLOP intensity, the amplitude and width of the soliton both exhibit a minimum or/and a maximum as a function of three-photon detuning. Moreover, these extrema will shift to the smaller side of the three-photon detuning with the increasing strength of CCRLOP. Meanwhile, with the increasing strength of CCRLOP, the whole trend of group velocity of the soliton changes from an initial increase.In the fourth chapter, we make a summary of our work and look forward to a further investigation on the related optical soliton in the semiconductor quantum wells.