| New materials, with low work function and high chemical immunity, are needed to produce low-cost and stable field emission display (FED). The unique intrinsic properties of diamond make it an excellent material for field emitter.;In the present work, using an IC-compatible fabrication process, a field emission testchip was designed, fabricated, and tested. The chip contains a number of test devices including a 1 x 4 pixel triode FED which was demonstrated for the first time. The testing of the chip revealed that it is important to enhance field emission current density for further development of FED.;Using different film growth conditions and post-deposition carbon implantation, the effect of defect on the field emission current density was systematically studied. The $rm CHsb4/Hsb2$ ratio, grain size, resistivity, and implantation dose in the ranges of 0.5-2%, 0.3-1.5 $mu$m, 1.7-189 $Omega$cm, and $rm5times10sp5{-}5times10sp6 cmsp{-2},$ respectively, were used to vary the defect density in the film.;Based on the field emission data collected from a variety of samples, it was found that emission from diamond is enhanced when (i) $rm spsp3/spsp2$ is low, (ii) peak at 1332 cm$sp{-1}$ is wider, (iii) grain size and the roughness of film are small, (iv) film is highly doped, and (v) ion implantation dose is high while energy is low. The results seem to suggest that field emission from polycrystalline diamond is affected by (i) defects and (ii) field enhancement at the grain tips. As all samples were treated in hydrogen at 900$spcirc$C, the electron affinity may be the same for all samples. |
