Morphology Of The ZnO Film At The Early Stage Of Deposition And The PL Property Of ZnO Based Films

ZnO is a promising semiconductor material with the properties of direct wide-band gap (Eg~3.3ev at 300K), large exciton binding energy (~60meV), as well as ferromagnetic behavior when doped with transmit metals. These properties make ZnO suitable for optical, optoelectronic and laser emission applications.In this paper, ZnO films were prepared in a RF-magnetic system and were annealed at different temperature. XRD, SEM, TEM were used to study the structure and the morphology of the thin film. Co-doped ZnO films were also prepared. XRD, PL and squid technique were used to study the structure, PL, and magnetic properties.The result showed that the morphology of the ZnO film were affected by the deposition conditions. At room temperature, the morphologies of the ZnO film were different when deposited on NaCl substrate and on Si substrate. When deposited at 200℃, the film transformed from fractal growth to compact growth.The effect of the annealing process on the structure and PL properties of the ZnO film was also discussed in this paper. The result showed that as increase the annealing temperature, the crystallization of the film becomes well. The annealing process also affected the PL properties of the ZnO film.The structure, PL and magnetic properties of the Co-doped ZnO films are also discussed in this paper. From the result, we can find out that the introduction of Co changes the structure of the film. The introduction of Co also affects the PL properties of the film. The magnetic properties of ZnO film is performed at 5Kusing a SQUID technique.