| ZnO is a wide-band-gap semiconductor material with novel properties and promising potential. It has attracted considerable interest due to its possible applications in solar cells, surface acoustic wave device, piezoelectricity devices. In this thesis, ZnO films were fabricated by plasma enhanced chemical vapor deposition(PECVD)on the substrates of Copper and glass with the raw material of Zn(CH3COO)2.2H2O(DEZ), using the same method, AZO was fabricated by Al-doped as a transparent conductive film for solar cells also, and their properties were analyzed by SEM, XRD, XPS, FTIR. et al. Main researches of this thesis are included as follow:(1) Basic properties, application perspectives and preparation process of ZnO thin films were introduced; the background and signification of ZnO were also illustrated; the fabrication technique of PE-MOCVD was depicted particularly.(2) The impact of different substrates, different temperature and annealing to ZnO was demonstrated; XPS shows that: the stability of ZnO on copper is not as good as ZnO which on glass. ZnO on copper is apted to absorb the oxygen and water vapor. XRD shows that: ZnO are polycrystalline, the high quality C-oriented ZnO are gained at 400℃. It is better for ZnO to grow uniformity at 600℃annealing temperature.(3) The thickness of AZO is 2μm through FSEM to obtain the profile morphology of AZO.So the deposition velocity of AZO is 66.7nm/min.Objection and growth mechanism of films were analyzed in theory. The impact of AZO to parameters of solar cells was discussed.(4) Plasma density of daylight lamp was measured by microwave diagnose, and plasma density is up to 1.5*1017m-3.This system has good reference for plasma parameters diagnose of PE-CVD technics.Because of the application of backing electrode thin film of solar cells for improve the efficiency and assure the stability,as the part of fabrication of solar cells and the application perspectives of ultraviolet laser device,it is meaningful for us to fabricate ZnO in this paper.
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