Preparation Of Vanadium Oxide Thin Films And Study On Optical And Electrical Properties

VO2 material is a widely used on the thermal material, while it has a variety of crystal structures. V02(M) is a kind of metallic compound which undergoes a metal-semiconductor phase transition near 68℃. For the characteristics that its phase transition temperature is near to room temperature and its optical and electrical performance have changed much during phase transition, VO2(M) has a great number of potential applications. Between 20℃and 80℃, VO2 (B) has no phase transition, but suitable resistance and high temperature coefficient of the resistance, which are advantages for applications as thermistor.This work adopt radio frequency reactive magnetron sputtering to prepare the oxide films of vanadium, and we add Oxygen to it and changed it to V02(M) film in annealing procession, we also analysis the films by XRD and analysis the appearance of films using AFM, we discuss the oxygen partial pressure in sputter procession and the influence that brings by the temperature to the films in annealing procession. The higher the oxygen partial pressure, the more percents of the oxygen, in the same condition of annealing temperature, the films will absorb more oxygen; the higher the temperature in annealing procession, the more contents the films absorb oxygen and the bigger the films crystallize are. We determine the curve of electricity-temperature by using four-point probe method which make the films making on the glass substrates changing about two orders of magnitude comparing with before, but there is only one orders of magnitude on the Al2O3 substrates. After the measurement of the curve of the through rate changing with the temperature, we find that the variation of the rate is obviously between the infrared and the visible light which is suitable for intelligent window.In this paper, we use magnetron sputtering method to prepare VO2(B) films on the plain glass substrates, we anneal them under vacuum and under atmosphere, we do the research about the influence of films bringing by sputtering temperature, annealing atmosphere, annealing temperature and annealing cooling rate in the air. During 350-500℃, the higher the sputtering temperature, the percents of VO2(M) in films; the best annealing temperature is 500℃under vacuum; it would be best that the annealing temperature is 400℃and the best annealing cooling rate is cool with the Sintering furnace in the air. The average TCR of the films which we got is 2%/K, the resistance is suitable, which can be used in measuring the micro-bolometer.