Research On Preparation Of Multilayer Structure Vanadium Oxide Films By Magnetron Sputtering

Vanadium oxide is a very complex system. As an excellent electronic material,Vanadium oxide has a higher resistance temperature coefficient (TCR). So it has a prominent advantage in the field of non-refrigerated infrared detection devices and infrared imaging. Now, vanadium oxide film materials are still ideal for infrared detectors for thermistors.The vanadium oxide thin films which can be used in the uncooled infrared detectors are classified into phase transition characteristics and no phase change properties. The non-phase change of the vanadium oxide thin film can avoid the influence of the thermal hysteresis caused by the phase change on the device performance. The detector has two characteristics for the thermistor-type films: the appropriate resistance temperature coefficient, generally not less than -2%/K; lower room temperature resistivity , less than 10 ?·cm.In this paper, the object is a non-phase change of vanadium oxide thin film, the preparation method using Direct Current reactive magnetron sputtering method to study the effect of process parameters on the electrical properties of the film in order to optimize the experimental process parameters to improve the film temperature coefficient of resistance purpose. At the same time, the composition, crystal structure and surface morphology of the vanadium oxide-free films were characterized by XRD,XPS and SEM. And analying effect of the intermediate layer on the properties of the film.The main contents are:(1) Analysis the effect of process parameters on the electrical properties of the films made by DC reactive magnetron sputtering method. A single layer of vanadium oxide thin film was obtained. Sputtering oxygen flow changes 0.1sccm, square resistance changes an order of magnitude. It is difficult to control. Therefore, the study of no phase change, multi-layer structure of the vanadium oxide film(2) The method of double target DC magnetron sputtering was used to prepare the non-phase change VOx /W/ VOx film. The effect of W on the properties of the films was studied. Analysis of electrical properties and found that W makes the film side resistance - the curve coincide better. The results showed that the W layer had a great influence on the surface morphology of the film. The inhibition of crystallization is mainly manifested in the XRD diffraction peak intensity.(3) Preparation of non-phase change VOx /V/ VOx film. Sputtering time, annealing time and annealing oxygen flow on the electrical properties of the film have been analyzed, and the parameters are optimized. The non-phase change VOx/V/ VOx film has a room temperature resistivity of 6.88?·cm, the resistance temperature coefficient can reach -2.44% / K.Through the above experimental study, we have a better understanding of the multi-layer structure vanadium oxide film, the impact of the middle layer on the performance of the film, and prepare a better performance of the film samples with non-phase change.