| Flexible AZO thin films were deposited on PEN and PET substrates by r.f. magnetron sputtering at room temperature. Results show that the AZO thin films have polycrystalline hexagonal wurtzite structure with highly c-axis preferred orientation. Growth conditions, such as sputtering power, working pressure, substrate type and Ar gas flow rate, affect the film's structural and photoelectric properties. For instance, increase of working pressure worsens the crystal property, increases the film resistivity, and narrows the optical energy gap due to the Burstein-Moss effect. Under the optimized condition, when the sputtering power is 150W, Ar gas flow rate is maintained at 20sccm, and working pressure is kepted at 0.05Pa, AZO thin films deposited on PEN substrate exhibit the highest figue of merit, reaching 1.78×104Ω-1·cm-1. The optimized film resistivity, carrier concentration and Hall mobility are 1.11×10-3Ω·cm, 4.14×1020cm-3 and 13.60 cm2·V-1·s-1 respectively, with an absolute visible transmittance of 95.70%.AZO/Ag/AZO multilayers were prepared on PET and glass substrates at room temperature via r.f. magnetron sputtering method, based on the optimized AZO thin films. The influences of Ag layer thickness and sputtering power on the multilayer structural and photoelectric properties are investigated. Results indicate that AZO/Ag/AZO multilayer exhibite ZnO(002) and Ag(111) preffered orientation, while the intensity of Ag(111) increases with increasing Ag layer thickness. The multilayer conductivity is enhanced by increased Ag layer thickness, but the Hall mobility reduces at the intial growth stage of Ag layer, because of the interface scattering. When the Ag layer sputtering power is kept at 200W and Ag layer thickness is 24nm, the optimized figue of merit is obtained. The optimized resistivity, transmittance, and figue of merit for AZO/Ag/AZO multilayer on PET are 3.97×10-5Ω·cm,78.67% and 6.59×104Ω-1·cm-1 respectively.
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