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Magnetron Sputtering Preparation Of Silicon-lithium Niobate <sub> 3 </ Sub> Waveguide Thin-film Materials Research,

Posted on:2009-09-03Degree:MasterType:Thesis
Country:ChinaCandidate:L YuFull Text:PDF
GTID:2190360245960912Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
As an important ferroelectric material for fabrication of SAW and integrated optical devices, LiNbO3 exhibits excellent electro-optical, piezoelectric and nonlinear optical properties. Generally speaking, LiNbO3 wave-guided structures are demanded in the optical devices. However there are several problems in the traditional wave-guided films so that there are increasing interests on the fabrication hetero-structure LiNbO3 films. Compared with bulk materials, hetero-structure LiNbO3 films possess a series of advantages, like available step index profiles in the multilayer structures. UP to now, there have been various techniques which were used to prepare the hetero-structure LiNbO3 films. Among them, RF-sputtering method shows some advantages over the others. As the base in the microelectronic technology, Si is an interesting host for preparing LiNbO3 films, because it provides an ideal and cheap substrate for large area processing of device which can be integrated in the current semiconductor technology, and this will make it possible to develop integrated electro-optics technology. Therefore, this work on Si-based LiNbO3 films is of great interests and potentials.Buffer layer is an important aspect in film growing. In this dissertation, the buffer layer is Si3N4/SiO2 and the structure of wave-guided is LiNbO3/Si3N4/SiO2/Si. The function of the buffer layer and the method of depositing buffer layer are introduced. LiNbO3 thin films are deposited on Si3N4/SiO2/Si substrates and the relationship between the quality of LiNbO3 thin films and the growing parameters of LiNbO3 thin films are analyzed. The optimized conditions of growing LiNbO3 thin films on Si3N4/SiO2/Si substrates are concluded: sputtering power 30W, O2/Ar rate 6:4, substrate temperature 550℃, gas pressure 3Pa, rapid thermal annealing (T=700℃,t=60s).The films are analyzed by the result of experiment which show that the films deposited in the optimized condition are highly C-axis oriented columnar multi-crystal have smooth surface and clear cross-sectional morphology. Due to their excellent crystalline quality, the films would be very potential in the application of optical wave-guided and SAW and useful for photo-acoustic-electric integration.
Keywords/Search Tags:Si substrates, optical wave-guided, LiNbO3, thin films, sputtering
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