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Heat Treatment Optical Properties Of Titanium Dioxide Thin Films Prepared By Ion Implantation

Posted on:2009-12-05Degree:MasterType:Thesis
Country:ChinaCandidate:Y F JuFull Text:PDF
GTID:2190360245961104Subject:Condensed matter physics
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TiO2 has application in the filed of environmental science, e.g., wastewater treatment, air purification and antibacterial aspect, due to its excellent photocatalytic performance in UV light. In this paper, ion implantation and subsequent annealing in N2 have been used to prepare TiO2 films in order to obtain TiO2 with catalysis in visible light. Ti ion-implantated fused silica andα-Al2O3 single crystals have been annealed in N2 ambience. In this way, N-doped TiO2 films are successfully prepared.In this work, optical absorption spectroscopy, Rutherford backscattering spectrometry (RBS) , transmission electron microscopy (TEM) , X-ray photoelectron spectroscopy ( XPS ) and SRIM 2006 calculation code have been utilized to characterize the optical and structural properties of samples. The results are listed as follows:1. 80 keV Ti ion implantation was performed at room temperature up at a fluence of 1×1017 cm-2 in both fused silica andα-Al2O3 single crystals (sapphire) . The implantation of Ti ions has introduced many defects in substrates. Therefore, the absorption of UV waveband increased, however, there is no clear absorption peak appeared. According to XPS results, metallic Ti0 and TiO2 film coexisted in the as-implanted samples.2. The as-implanted samples have been annealed in N2 and O2 ambience, respectively. The optical absorption edge of TiO2 appeared in fused silica matrix at 500℃and in sapphire at 600℃, respectively, after annealing in N2 ambience. After annealing at 900 C in N2 ambience, a red shift of the optical absorption edge of TiO2 was observed from 3.98 eV (500℃) to 3.30 eV (900℃) in fused silica while 3.90 eV(600℃) to 3.45 eV (900℃) in sapphire, due to the formation of O-Ti-N compound. The tail of the absorption edge extends to the visible waveband and the absorption intensity of TiO2 increases in the visible waveband. After annealing in O2 ambience at 500℃, the optical absorption edge of TiO2 in both fused silica and sapphire appeared. But the red shift is not so clear as that in N2 ambient with the increasing temperature.3. The results show that the optical properties of TiO2 film in fused silica and α-Al2O3 single crystals are similar. However, the annealing ambience plays a very important role in the optical properties of TiO2 film. For the samples annealed in the N2 ambience at 900℃, a new compound of O-Ti-N formed because a small amount of O atoms are substituted by N atoms in the lattice of TiO2. The formation of O-Ti- N makes the tail of the absorption edge extend to the visible waveband and the absorption intensity of TiO2 increase in the visible waveband. This result shows that nitrogen-doped TiO2 has catalysis in the visible light.
Keywords/Search Tags:Ion implantation, N-doped TiO2 film, Energy gap, Annealing
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