Of Zao Film And Zno Nano-array Preparation And Application Of Research

As a group-II-VI compounded semiconductor with superior optoelectronic properties, Zinc oxide (ZnO) is widely used in various optoelectronic devices for its large exciton binding energy (60 meV), easiness of being doped to n-type, and inclination of being prepared to nano-arrays with various morphological features.In this paper, AZO films were deposited on K9 glass substrates by DC reactive magnetron sputtering. Various influential factors such as oxygen concentration, sputtering power, substrate temperature as well as gas flow rate to film structure and optoelectronic properties were discussed. EDS and X-ray diffraction were used to investigate the performances of AZO thin films. It indicates that the element Al was effectively embedded into the lattice of ZnO, the AZO thin films were characterized with wurtzite structure and a preferential growth direction of (002). The lattice was distorted because of Al doping, which induced planar stress in the films. The quality of AZO films was decided by oxygen concentration, and the internal stress of the films can be reduce if sputtering power, substrate temperature and gas flow rate were set properly. All the films prepared in this paper were characterized with low resistivity (10-4Ω?cm) and high visible transmittance (>90%).In addition, ZnO nano-arrays were prepared on AZO films by hydrothermal method. The SEM results demonstrated that ZnO nanorod arrays with regular shape can be synthesized in zinc acetate solution with certain concentration when heated at 90℃for 3 hours. ZnO nanorod and sheet array with regular shape could be prepared in the mixed solution of zinc acetate and Hexamethylene tetramine (HMT) with appropriate concentration. Excellent electrical contact between ZnO nano-arrays and AZO films was evidenced by 4200-SCS IV. The absorption edge close to ZnO body material and the visible transmittance less than 80% were investigated by UV-1700 spectrophotometer. The low transmittance of the films may be caused by the interface scattering of nanostructure materials in addition to defect level absorption.Besides, based on results above, the structure as well as the electrical and optical properties of the glass/AZO/n-ZnO/a-Si:H/M heterojunction solar cells were theoretically analyzed,laying a foundation to future research of related solar cells.