Preparation Of Magnesium-zinc Oxide Material And Its Application In Amorphous Silicon Solar Cells

Transparent conductive oxide(TCO)materials with high transmittance and high conductivity are widely used in optoelectronic devices.Among them,the magnesium zinc oxide(MgZnO)material formed by doping magnesium(Mg)in zinc oxide(ZnO)has better optical transmittance than ZnO film.It has great potential in the application of amorphous silicon(a-Si:H)solar cells.The research of this paper is mainly divided into the following three parts:(1)The AZO film was prepared by magnetron radio frequency sputtering.The four probes,XRD,SEM,and optical transmittance tests were used to analyze the effects of different factors on film resistance,surface morphology,and optical transmittance.Studies had shown that when the Ar flux was 50 sccm,the average transmittance of the film was above 90%in the range of 400-800 nm;It was found that when the temperature was 300?,the crystal grain arrangement on the film surface was the most dense,which was tested by SEM;The resistance of the AZO thin film prepared after the sputtering power was first reduced and then increased,and the minimum sheet resistance was 147?/sq.(2)The optimum process conditions of MgZnO film were studied based on the process of AZO film.The research results showed that when the substrate temperature was 300?,the AZO sputtering power was 30 W,the Ar flow rate was 50 sccm,and the deposition pressure was 9 Pa,MgZnO film performance index FOM value reached4.4×10^-3.The test showed that the average optical transmittance(93%)of MgZnO film within 400-1200 nm was about 3%higher than that of AZO film;the optical band gap was 0.17 e V larger than that of AZO film(3.37 e V);Hall test was performed on the film.It wwas found that the square resistance of the film was 150?/sq,the maximum carrier concentration was 4.5×10²⁰ cm³,and the mobility was 11.5 cm2/V·s.when the Mg content was low,MgZnO still maintained the wurtzite crystal structure of the AZO film,which was tested by XPS and XRD.(3)The prepared MgZnO/Ag/ITO(MAI)conductive film structure was applied as a composite electrode to a-Si:H solar cells and subjected to CO₂ plasma(COP)treatment.The test showed that the MAI film had good photoelectric performance after COP treatment.The average optical transmittance was 86%in the visible light range of 400-800 nm,and the sheet resistance was 27?/sq.The a-Si:H solar film prepared by the composite electrode.The initial efficiency of the solar cell reached 3.5%.