Research Of Soft Error Analysis And Reinforcement Technology In SRAM Under The Effect Of Gate Oxide Degradation

At present, the integrated circuits manufacturing process has entered nanometer era; soft error problem has become the major factor affecting the reliability of integrated circuits. Meanwhile, the gate oxide thickness decreases as the technology advances, and the impact of gate oxide degradation on soft error problem is becoming increasingly serious. Therefore, analyzing of modeling on the reliability of integrated circuits especially on the storage unit under the gate oxide degradation effect is of great significance.This paper focuses on SRAM cell reliability under the effect of gate oxide degradation, conducting a study of the following aspects:First, according to the existing model of gate oxide degradation, this paper for the first time derives a SRAM cell's critical charge calculation model under the effect of gate oxide degradation through mathematical modeling and simulation analysis, and verifies its correctness.Second, this paper simulates the relationship among gate oxide degradation and soft error rate and the influence of gate oxide degradation on SRAM cell's reliability at different technology nodes. According to the calculation model, in the gate oxide degradation conditions, the size of supply voltage has two opposite impacts on the critical charge. So there must be an optimal supply voltage Vopt, making the SRAM cell's critical charge maximum. This paper verifies the conclusion by simulating an experiment. Furthermore this paper simulates the optimal voltage and maximum critical charge at different gate oxide degradation levels and technology nodes.At last, this paper describes the various methods of soft errors reinforcement, and focuses on the circuit design reinforcement methods coupling capacitor, 10T unit and a stable structure of SRAM cell.The work of the article has a certain value to guide SRAM design and analysis the susceptibility to soft errors under the effect of gate oxide degradation.