Research Of Preparation And Optical Properties Of Al_xZn_1-xO Thin Film

AlxZn1-xO Ternary compound was a new type of semiconductor material, and the band gap of ZnO is3.3eV, and the band gap of Al2O3is5.1eV, band gap of AlxZn1-xO can be tuned from3.3eV to5.1eV in terms of theory。 AlxZn1-xO Ternary compound has a applicable to the visible light emitting fluorescence and UV detectors of280～220nm. Presently,the research to this material became a one of the hot spot.In this paper, AlxZn1-xO films were prepared on sapphire, two-target radio frequency magnetron co-sputtering method.And Al2O3, ZnO ceramics as a pair of co-sputtering target.we prepare Al2O3and ZnO ceramic target by high-temperature solid phase at different temperatures the sintering temperature, then we analyze the performance of these targets. AlxZn1-xO films were prepared on sapphire, quartz and Si substrates.The experiment gets important conclusions as follow. The best sintering temperature of ZnO target is750℃,and the best sintering temperature of A1203target is1450℃; The required power set of quartz substrate satisfying the solar blind region UV detection is10w,40w,50w for ZnO target and200w for A1203target. Absorption edge from199nm to287nm is continuously adjustable. The best substrate for the preparation of Alx Znl-xO thin films is quartz.