Study Of Doping Vario-property Of ZnO Film

ZnO has broad application prospects in Transparent conducting thin films(TCO), thinfilms transistor(TFT), liqud crystal display because of its superior performance such aswide band gap, high extiction binding energy, non-toxic, low cost, high radiationprotection and so on. Through doping other elements to improve its character has been ahotpot recently. In this paper, we perform first-principle calculation which is based ondensity functional theory (DFT) to investigate the related performance of Cu-2N dopedZnO system and rare earth doped ZnO system. Besides, thin films preparation alsoconducted by Sol-Gel to get proper parameters.For the Cu-2N co-doping system, the calculation concentrate on the change of crystalstructure, band gap and conduction type. The paper discussed in detail for the physicalmechanism of conductivity. The absorption coefficient and reflective increased whenCu-2N doped the ZnO, the transmittance of the doped system decreased.After doping of rare earth elments(La、Nd、Eu、Er), the crystal structure remains thesame. Ionicity of the system, conductivity and the transmitance were analysed. Er dopedsystem is better than others. The system become more stable after Al-Er co-doping, carriorconcentration increased and express better metallicity. But transmitance decreased at thesame time. For the analysis of different Er doped concentration system, the hexagonalstructure destroyed when the doping concentration up to12.5%and it convert to P-typeelectric conduction. Transmitance decreased and the reflective for infrared reach up to55%. It express better photoelectrical property when the doping concentration is6.25%.Pure ZnO and Er-doped ZnO were prepered by sol-gel. Structure, surface appearanceand transmmitance were analysed by XRD, AFM, Four-probe meter, ultraviolet andvisible spectrophotometer. Resarch finding that Er-doped ZnO has better electricalconductivity and transmittance than pure ZnO. Results of experiment have goodagreement with the calculation.