Investigation On Preparation And Properties Of TiAlN Film By Magnetron Sputtering

Cemented carbide coating starts to be used in order to solve the cemented carbide’s problem. TiAlN film is widely used variety industry because of its high hardness, good hardness, high oxidation temperature and strong adhesion.In this paper, TiAlN film is prepared by Mid-frequency Unbalanced Magnetron Sputtering. The topic researches that bias voltage, N2, Ti/Al and time’s effect on the mechanical properties of TiAlN film in orthogonal test method in order to find the best way to prepare the best film. bias voltage, N2, Ti/Al’s effect on Surface morphology, fracture morphology, ingredient and phase constitution of TiAlN film be studied, contrasting to the optimum technology parameters’ sample. The hardness, adhesion, surface morphology, phase and fracture morphology were investigated by micro-hardness tester, scratch tester, metallographic microscope, X-ray diffraction, SEM and EDS, respectively.The hardness and the adhesion are used as the properties of Ti AlN film criteria. The orthogonal test results: The bias voltage,N2 and Ti/Al have big effect on TiAlN film, time has small effect on TiAl N film. In terms of hardness, it will be increase and then reduce with the bias voltage and N2’s increase; it will be increase and then reduce with Ti/Al’s reduce. In terms of adhesion, it will be increase with the bias voltage’s increase, it will be reduce in small range and then increase with the N2’s increase, it will be increase with the Ti/Al’s reduce. The optimum technology parameters: N2 is 65 ml, bias voltage is 30 V,Ti/Al is 2:3, time is 250 min. Its thickness is 4μm, its hardness is 3479 HV and its adhesion is 76 N in this technology parameters.Phase and fracture morphology states: The surface of coating will be more smooth with bias voltage’s increase and Ti/Al’s reduce; The thickness and bias voltage also have effect on boundary layer between substrate and coating; EDS states:the content of Al is high in this four samples and Al/Ti will be increased with the bias voltage’s increase; To a certain extent, N2 also affects the distribution of elements content. XRD analysis shows: Four samples have the TiAlN and TiN phase, The crystalline grain of TiAlN is more smaller than substrate(WC)’s. TiAlN’s diffraction peak shape is similar to the TiN, but skewing to the high angle. I(111)/I(200) will be increased with the N2 and the content of Al’s increase.