Fabrication And Property Study Of Semiconductor Nanowire Array Based On AAO Template

Anodic aluminum oxide（AAO）templates fabricated by electrochemical deposition method with advantages of uniform diameter as well as easy fabrication process,whose composition and structure could be tuned by alteration of deposition voltage and time,have become the main method to obtain one dimensional nano-structure arrays.Here,this paper fabricated double-pass AAO templates by two-step anodization method that can be directly applied to the electrochemical deposition of one-dimensional nanomaterials.By utilizing homemade double-pass AAO templates and three-electrode electrochemical workstation sedimentary system,a series of Bi-Te semiconductor nanowires array was prepared,while correspondent phase,morphology and characteristics of semiconductor as well as infrared performance were studied comprehensively.The main contents of this thesis are as follows:1.In this paper,based on gold coated aluminium slice sealed plastically with aluminum foils,well mechanical support and electric conductivity was obtained by double-pass AAO templates,which could be applied to electrodeposition nanowires technique as electrodes directly.The thesis solved the fragility problem of double-pass AAO template,while significantly improved deposition uniformity and stability.2.The thesis discussed correspondent of electrochemical polish,second oxidation duration and expansion period of phosphoric acid solution in order to prepare uniform pores distributed double-pass AAO template with tunable hole size and depth properties.Prepared double-pass AAO templates have aperture size from 50nm to 80nm and adjustable hole depth from 10μm to 60μm.3.This thesis fabricated various Bi_xTe_1-x semiconductor nanowire arrays with different stoichiometry by three-electrode system of electrochemical workstation system.Meanwhile,Bi-Te semiconductor nanowires arrays with various deposition time and thickness of AAO templates were achieved.4.The thesis presented the research of dissolving double-pass AAO template in the membrane solution,whose results showed that Bi-Te semiconductor nanowire arrays with different morphologies can be obtained by controlling the time before removing template.5.In this paper,the semiconductor types and infrared properties of prepared Bi-Te nanowire arrays were simulated and characterized.The infrared performance measurements and simulation results revealed that infrared absorption structure with excellent performance can be obtained by manipulation of topography structure of semiconductor nanowire array.The results may pave the way for one-dimensional nano-materials research in IR spectrum.