Thermal Simulation Of Long Pulse Laser And On-line Silicon-based APD

Long pulse laser interaction with online silicon-based APD will cause the change of temperature,at the same time,when placing bias,should not only consider the incident laser based on online silicon-based APD detector absorption and direct heat formation,but also the incident laser photovoltaic effect,combined with the online silicon-based APD photoelectric detector,the internal electric fields of the formation of raw electromotive force or light current,the electric field of online silicon-based APD detector inside the work done and indirect form of heat.In this paper,the thermal model of long pulse laser and online silicon-based APD is studied by theory and simulation,and the relationship between the thermal effect of long pulse laser and online silicon-based APD under different conditions of zero bias voltage and external bias is analyzed,and the rationality of the thermal model is verified by experiment.A thermal model of long pulse laser and on-line silicon-based APD was established.In the thermal model of zero-bias voltage-time pulsed laser and online silicon-based APD,only the laser heat source term was considered to realize the theoretical analysis of temperature,and the conversion between the average energy and peak energy of the laser was processed by using the energy conservation theory.Outside buy DE long pulse laser and silicon-based APD online thermal model,considering the laser heat source,and joule heat source for the theoretical analysis of the temperature in the process of pulse laser action online silicon-based APD peak temperature increases with the increase of the external bias and slightly higher than the peak temperature at zero bias voltage,and the function of the pulse laser online after the silicon-based APD annealing temperature and time is far greater than the phenomenon of zero bias voltage when the annealing temperature and time of reasonable explanation is given.The thermal simulation of long pulse laser and on-line silicon-based APD was carried out.Thermal simulation of long pulse laser interaction with silicon based APD under different energy densities and pulse widths at zero bias voltage and external bias voltage was obtained.It is pointed out that the change rule of axial temperature of silicon-based APD on line at external bias is extreme at t=0.1ms,and the location is the junction of photosensitive region N+ and avalanche region P(z=0.18 m),that is,the peak of joule heat,and does not change with the laser energy density,pulse width and external bias.The analysis of the generation,failure and recovery process of joule heat source can also give a reasonable explanation for the appearance of temperature extremum and the phenomenon that the temperature dewarming time is much larger than that without external bias.Experimental verification of long pulse laser and on-line silicon-based APD thermal model was carried out.Get zero bias voltage and external bias when under the condition of different energy density and pulse width of the long pulse laser with online thermal experiment law of silicon-based APD function,with the simulation results were compared,through the law of evolution trend,and data contrast,verify the long pulse laser and online thermal model of the rationality of silicon-based APD function,the key to realize the focusing heated in long pulse laser and the temperature of the external bias online silicon-based APD function of the important role in the evolution process of experimental verification.