Design And Fabrication Of Current Non-injection?Transparent Non-absorptive Window For 9XX Nm Devices

High-power lasers,especially high-power lasers based on semiconductor lasers,have become one of the key developments in next-generation laser technology due to their small size,high power,and good reliability.Catastrophic optical damage?COD? has always limited the laser's power output and longer output time.When the laser is operated at a higher optical power density,the heat is absorbed due to the discontinuity of the lattice at the cavity surface,and the temperature rise causes the energy band gap to shrink,thereby aggravating further heat absorption and further energy band gap shrinkage.,forming a vicious circle that eventually causes the cavity surface to burn out.In order to improve the COD threshold of the laser,this article discusses the influence of carriers on the cavity surface.The current non-injection and transparent window of the semiconductor laser are designed.The non-impurity vacancy-induced quantum well hybrid technology is used to prepare the current non-injection.and transparent window with a wider bandgap.In addition this paper also discusses the relaxation of the cavity surface caused by cleavage of the semiconductor laser,and other academic problems such as changing,the crystal lattice deformation of the cavity surface by optimizing the thin film stress.?1?Current non-injection window of the laser was prepared,and the COD threshold of the 940nm high power semiconductor laser was improved.A 25?m cavity surface non-implantation region was fabricated on the cavity surface of the device.Corrosion depth of 200 nm,deposition of 200nm Si₃N₄ dielectric film.Test the device and analyze the data.?2?The absorption-free window was prepared by Impurity Free Vacancy Diffusion?IFVD?technique.Analyze the effects of annealing temperature,film material and film thickness on the laser optimize the process conditions and prepare the no absorption window.Test the device and analyze the data.?3?Film stress will change is gap.The thin film process is optimized to produce a Si3N4 film with a larger band gap to avoid device failure due to film breakage.This process is used to prepare the laser cavity surface.Test the device and analyze the data.?4?The influence of the reflectivity of laser cavity films on the output power of the semiconductor laser was analyzed.This paper effectively improves the COD threshold of the device by the non-injection process of the laser cavity surface,the non-absorption window process and the cavity surface film process,which further inproves the reliability and lifetime of the laser.