Mechanical Analysis Of Interface Bonding State Of TiO₂ Film/Si Substrate

Titanium dioxide films have been receiving much attention because of their excellent properties.Silicon-based titanium dioxide films are used in many fields such as semiconductor thin-film luminescent materials,solar cell anti-reflective films,and photovoltaic power generation.However,due to the natural oxidation phenomenon of monocrystalline silicon at the same time,in large-scale industrial production process,it will lead to a perfect combination of silicon-based and titanium dioxide films is not ideal,there will always be more or less a part of the natural oxidation of silicon in the middle region.Therefore,in this paper,the nano-TiO₂ thin films were deposited on the natural oxide layer on the surface of a monocrystalline silicon substrate by magnetron sputtering.The energy dispersive X-ray spectroscopy?EDX?and transmission electron microscopy?TEM?high resolution image analysis were performed on the sample interface to determine the film sample as a double-layered film structure.Combined with X-ray diffraction?XRD?analysis,it can be seen that the upper film is a crystalline titanium dioxide film with a thickness of about 30 nm;the lower film is an amorphous natural oxide film with a thickness of about 22 nm and the substrate is monocrystalline silicon.The comparison of the samples before and after annealing by atomic force microscopy?AFM?shows that the roughness and particle size of the annealed TiO₂ film are increased,and the annealed film is more dense and flat.X-ray diffraction?XRD?analysis of the samples before and after annealing showed that a oriented growth has taken place in the anatase?110?crystal face in the annealed titania film,and the crystallinity of the monocrystalline silicon substrate was greatly improved.Analysis of stress and bonding state on the interfaces of monocrystalline silicon and amorphous natural oxide film,rutile structure and amorphous natural oxide film,anatase structure and amorphous natural oxide film by Geometric Phase Analysis?GPA?and Plane Hooke's Law shows a good performance of bonding state on the interface of monocrystalline silicon and amorphous natural oxide film,and a better performance of bonding state on the interface rutile structure and amorphous natural oxide film than anatase structure and amorphous natural oxide film.