Study On Luminescence Properties Of SOI Materials By Si~+ And Si~+/Fe~+ Combined Implantation

Silicon(Si)is the carrier and cornerstone of the entire semiconductor microelectronics.But the indirect band-gap nature of silicon(Si)makes it necessary to achieve optical transitions with phonons,which greatly affects the optical efficiency of silicon materials.At the same time,phonon participation will lead to Si photoelectric device response rate is reduced.It is precisely because of these unfavorable factors to a large extent limit the application of Si in the field of optoelectronics.Ion implantation is an effective means for the modification of Si-based materials.on implantation is an effective means for the modification of Si-based materials.Combined with the rapid annealing process,the corresponding defects and Si nanocrystals can be formed in the Si film by adjusting the implantation process and annealing conditions.Silicon-based materials from ultraviolet to near-infrared strong light-emitting.By Si+ self-implantation and Si+/Fe+ composite ion implantation,all the defects in the Si film of SOI are introduced.Different defects will form various impurity levels in different positions in the forbidden band,so as to lift the forbidden transition to the indirect band-gap semiconductors defects,defective clusters and extended defects can form complex luminescent centers in silicon.Therefore,the combination of ion implantation and rapid annealing process on silicon-based materials is used to study the optical defects of Si-based materials in the system and the luminescence mechanism of nanoclusters,to achieve the integration of silicon-based optoelectronics has a role can not be ignored and great potential application value.In this thesis,the preparation of silicon(SOI)luminescent materials on Si+self-implantation and Si+/Fe+ composite ion implantation insulators and their optical properties were investigated.The origin of the luminescent center and the evolution mechanism of the optical cluster and the effect of the implanted dose,the annealing time and the annealing temperature on the luminescent properties of the silicon-based materials were studied.The work of this paper and the results are as follows:1.Study on the luminescent properties of Si+ self-implantation SOI MaterialsSi+ is implanted into the Si thin film on SOI by ion implantation technology,and then the rapid thermal annealing process is carried out to introduce defects in SOI top layer Si,and these defective centers are in the visible-near-infrared band of photoluminescence.The photoluminescence spectra were studied by different temperature tests under different conditions of different implantation doses,different annealing temperature and annealing time.According to these fluorescence characteristics,the luminescence mechanism of each light is elucidated,and the evolution path of these luminescent centers is discussed.The effects of implantation dose,annealing time and annealing temperature on the luminescent properties of silicon-based materials are studied.These studies are of significance to improve the luminescent properties of Si-based materials.2.Study on the luminescent properties of Si+/Fe+ composite implanted SOI structureDesign of ion implantation machine new fixture,MEWA source ion implantation machine to improved the Fe ion implantation.On the basis of the optimized experimental parameters of Si+ self-implantation SOI,Fe+ implantation was carried out,and finally the rapid thermal annealing process was adopted.The Raman,XPS,AFM and PL test methods were used to study the nanocrystalline clusters formed in the visible-near infrared band and the effects of different conditions on the size and structure of nanocrystals were investigated.The fluorescence characteristics and surface morphology were studied,and the origin of the partial emission peak and the evolution mechanism of the optical cluster and the effect of the ion implantation and annealing process on the surface morphology of SOI were elucidated respectively.