Study On Luminescence Properties Of SOI Materials By Si~+ Light-doses Step-by-step Multi-implantation And Fe~+/Si~+ Combined Implantation

Silicon?Si?material is the most abundant element on the earth,and have superior electronic properties in comparison with that of other semiconductors.As a result,it is widely used as a kind of electronic material.Recently,Si is also regarded as a photonic material.However,since Si is an indirect band-gap semiconductor,its optical efficiency is greatly depressed by some factors,for example the completion of optical transition requires the assistance of phonons,which obviously restrains the application of Si in optoelectronics.Taking advantage of the Si-based defect engineering,the ion implantation are employed to introducing optical defects then modify the optical properties of the silicon-based material.Combining the ion implantation and rapid thermal annealing technologies,and taking into account the appropriate adjustment of the energy and dose of ion implantation,and effective control of annealing time and temperature,corresponding defects and Si nanocrystalline structure can form in the Si film,and achieve the strong emission of the Si-based material from the ultraviolet to the near infrared photoluminescence.The modified Si film with hig emitting efficiency plays an important role and has great application potential for the realization of the integration of Si-based optoelectronics.In this work,we focus on the the luminescence properties of SOI materials implanted with low dose Si⁺step by step and the SOI materials implanted with Fe⁺/Si⁺composite.The research content includes the two following aspects:1.The photoluminescence properties of SOI materials modified by multi-implantation of light doses Silion step-by-stepSi self-ion is implanted step by step into the Si films on the Si O₂insulation layer with multiple times and light dose by sequentially decreasing the implantating energy.In the normal direction of Si film,several?-distributed Si⁺enriched layers form.The purpose of this method is to increase the thickness of the active layer moderately and to form optical clusters saturated in the depth dimension of the thick active layer.At the same time,the density of non-radiative composite centers,such as injected damage can be restrained at a lower level.Before the implanting experiment,the specific experimental parameters are determined by the simulation results based on the SRIM software.First,the crystallinity of the implanted samples are analyzed by Raman spectroscopy.Due to the introduction of defects in Si thin films on top of SOI substrates via ion implantation,some lattice damage is repaired by rapid annealing.The photoluminescence peaks of defect centers are observed in visible and near infrared bands.At the same time,the effects of these factors on the luminescence properties of Si self-ion-implanted SOI materials are investigated with different implantation times,implantation energy,implantation dose,annealing temperature,and annealing time.2.The photoluminescence properties of the modified SOI wafer by the combined implantation of Fe⁺and Si⁺The Fe⁺/Si⁺composite implantation are conducted on the Si film of the SOI wafer.Firstly,the Si⁺implantation follows the Fe⁺implantation to enhance the temperature stability of the modified SOI wafer.At the same time,before the combining implantation experiment,the distribution of Fe⁺/Si⁺in Si film with different implanting energies are calculated based on the SRIM software.The relationship among the different depth of implantation formed by implanted ions in the substrate at different implantation energies is obtained,and our experimental parameters are determined based on the simulation.The effects of these factors on the luminescence properties of Fe⁺/Si⁺composite implanted SOI wafer are investigated with different implantation energy,implantation dose,annealing temperature,and annealing time.The formation mechanism of nanocrystalline clusters is studied by means of Raman,IR,XRD and photoluminescence?PLL?.The photoluminescence is observed in both visible and near infrared bands,and the effects of different parameters on the size and structure of nanocrystals are also investigated.