Preparation And Resistive Switching Characteristic Study Of Ba_xSr_1-xTiO₃ Thin Film Based On Hydrothermal Method

In recent years,in order to meet the needs of the further development of artificial intelligence technology,more research teams have turned their attention to the new non-volatile memory technology.Resistive random access memory(RRAM)is one of the most promising new types of non-volatile random access memory(NVRAM).Its resistive memory element(RME)enables multi-value memory,and its arrays can implement in-memory computing.It is possible to solve the bottleneck of the memory wall in Von Neumann architecture that promotes the development of artificial intelligence technology.Barium strontium titanate(BST),as a multifunctional material with a perovskite structure,has promising feature for application in the RRAM field.In this paper,polycrystalline BST thin films were prepared by hydrothermal method.The properties of the thin films were analyzed by physical detection.The BST-based RME was designed and developed.The current-voltage test was used to systematically study its resistive switching properties,and a physical model was built to explain its resistive switching mechanism.The main contents of this paper include the following aspects:1.The BST-based RME with Pt/BST/TiN/Pt/Ti structure was designed.The BST film was grown on TiN/Pt/Ti substrate by hydrothermal method,which solved the difficulty of obtaining polycrystalline phase in the traditional physical deposition process.The problem of the media layer.2.The BST film detected by X-ray diffraction showed polycrystalline structure.The surface morphology and roughness of BST film were measured by atomic force microscopy.3.The resistive switching process of BST-based RME was detected by I-V curve.The results showed that the initial state BST-based RME has a large high-low resistance ratio,and as the number of cycles increases,the BST-based RME has a process of RS reversal.The bipolar resistance characteristics of the clockwise resistance switching(CWRS)and counterclockwise resistance switching(CCWRS)are analyzed.4.The resistance mechanism of BST-based RME was studied by oxygen vacancy conduction mechanism.The I-V curve was fitted with a double logarithmic curve to analyze the relationship between current and voltage,including Ohm's law and space-charge-limited current model.The resistive switching process was explained by the oxygen vacancy conductive filament model.The application of BST-based RME in complementary resistive switching was discussed.