Study On The Cutting Mechanism Of Electroplated Diamond Wire For Silicon Crystal

In recent years,with people’s attention to new energy,the PV industry has been booming.And in the PV industry chain,the production of silicon wafers is one of the most important processes.As the quality of silicon wafers will directly affect the subsequent production costs,In the PV industry chain,the cutting technology of silicon crystal is a particularly important process.To study the cutting mechanism of electroplated diamond wire to silicon crystal and other factors influencing the quality of silicon wafer in the cutting process,will provide theoretical basis for ensuring and improving the quality of silicon wafer in the later cutting process.Considering that the removal mechanism of diamond particles in different positions may be different,i have calculated the critical indentation depth and critical angle of brittle plasticity of electroplated diamond wire under different parameters respectivelyi in these paper.And through observation of the change of critical pressing depth and critical Angle of brittle plasticity under different parameters,the removal methods of diamond particles at different positions were analyzed.Then,observe the morphology of the machined surface and chip morphology of the cut silicon sampleby use of Scanning electron microscopy,so as to analyze the removal method of the silicon crystal and study the influence of different cutting parameters on the removal mechanism of the silicon material.In addition,the damage of machining surface and subsurface of silicon wafer is investigated with Electron microscopy,Raman spectroscopy,XRD and 3D scanning.The results show that: there are not only amorphous silicon on the spicemens,but it also has a lot of micro crack,and the micro crack will become more and wider with the increase of feed speed;the roughness ofsilicon wafer increases with the increase of feed speed and decreases with the decrease of linear speed;it is also detected some amorphous silicon on sub-surface of silicon wafer through the method of angle inlay and polishing.The influence factors of sawing force including three factors linear speed,feed speed and linear diameter are study in this paper.The cutting experiments of three different wire diameters of electroplated diamond wire with different cutting parameters are carried out in these paper,and then the experimental formula of cutting force is obtained by analyzing and calculating the torque and other data collected during the experiment.The failure mode of electroplated diamond wire was studied by use of scanning electron microscope.The failure of electroplated diamond wire can be divided into the following two categories: 1.Wear,breaking and falling off of diamond particles;2.Wear and falling off of Electrodeposit.