Research On Driving Circuit Of Mine Power Electronic Converter

With the development of intelligent and high-efficiency coal mine large-scale industrial machinery in my country,the converter is an important part of coal mine high-power machinery,and the improvement of its efficiency and power density has always been the focus of research at home and abroad.New Si C devices have made major breakthroughs in terms of switching frequency,efficiency,and power density.At present,there are very few research applications on Si C devices in coal mine equipment.Si C devices have the advantages of high switching frequency,low switching loss,and high temperature resistance.The high switching frequency can reduce the volume of devices such as capacitors and inductors,but short pulse signals at high frequencies are extremely harmful to the devices.In severe cases,they will burn the devices and affect the safety of the entire system.Low switching loss and high temperature resistance can reduce the volume of the heat sink,but the short-circuit withstand time of Si C devices is shorter than that of silicon(Si)-based devices,and the short-circuit withstand time will also decrease at high temperatures.Therefore,it is necessary to study the drive control system of Si C power device converter in medium/high voltage and high power applications,especially in the harsh environment of coal mines.By referring to a large number of documents,the research status and application of converters at home and abroad have been understood in detail,and the Si C device adopts parallel and cascaded Si C MOSFET module CAS300M17BM2,and the Si C driver core is APD202.By comparing the basic characteristic parameters of the Si C MOSFET module and the Si IGBT module,the thesis deeply analyzes the influence of the loop parameters on the switching characteristics of the Si C MOSFET module,studies the design points of the Si C MOSFET module drive circuit,and models the three-phase two-level for mining Converter topology diagram,its power devices use Si C MOSFET modules instead of Si IGBT modules,calculated gate drive parameters,designed short pulse suppression circuits,drive power supply,drive signal circuits,various drive protection circuits,and are studying short-circuit protection In the circuit,a short-circuit protection circuit that is different from the traditional desaturation detection method is designed to improve the detection accuracy.Finally,a double-pulse test simulation experiment was performed on the drive circuit,and the results showed that the gate drive parameters designed in this article were accurate and the drive waveform could be improved;the over-current and shortcircuit protection experiment results showed that the circuit will not fail when the current protection value is not reached.When an overcurrent occurs,the circuit can be reliably shut down.Experiments on the influence of loop parameters on the drive circuit show that the switching characteristics of the Si C MOSFET module can be adjusted by changing the loop parameters to reduce switching loss,voltage and current overshoot.The paper has 60 pictures,5 tables,and 50 references.