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Keyword [epitaxy]
Result: 161 - 180 | Page: 9 of 10
161. Hybrid Molecular Beam Epitaxy for High Quality Strontium Titanate
162. Graphene Synthesis by Thermal Cracker Enhanced Gas Source Molecular Beam Epitaxy and Its Applications in Flash Memory
163. Electrical, optical, and defect properties of carbon-doped gallium nitride grown by molecular-beam epitaxy
164. Study of the early stages of growth and epitaxy of gallium nitride thin films on sapphire
165. Electrical and optical properties of indium nitride and indium-rich nitrides prepared by molecular beam epitaxy for opto-electronics applications
166. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy
167. Arsenic-doping of silicon by molecular beam epitaxy
168. Self-assembled nanostructures of group IV elements on germanium substrate by molecular beam epitaxy
169. Sapphire surface preparation and gallium nitride nucleation by hydride vapor phase epitaxy
170. Surface monitoring and enhancement of crystal growth with in situ ion bombardment during semiconductor epitaxy
171. Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics
172. Engineering of compound semiconductor nanostructures by metalorganic vapor-phase epitaxy
173. Epitaxy of self-assembled nanostructures by metalorganic chemical vapor deposition
174. Epitaxy of mercury-based high temperature superconducting films on oxide and metal substrates
175. Morphological evolution during molecular beam epitaxy of germanium/germanium(001) and silicon/germanium(111)
176. X-ray investigations of the initial growth of silicon/germanium/silicon heterostructures grown by surfactant mediated epitaxy
177. In situ high-temperature scanning tunneling microscopy studies of early stage growth kinetics during titanium nitride epitaxy
178. Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates
179. Molecular beam epitaxy growth and characterization of beryllium-based II-VI semiconductor materials and distributed Bragg reflectors for potential application in visible light emitters
180. Nanoscale patterned growth by molecular beam epitaxy and its applications
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