epitaxy - Globe Thesis - Globe Thesis

Keyword [epitaxy] Result: 181 - 200 \| Page: 10 of 10
181.	Alternative substrates for gallium nitride epitaxy and devices: Laterally overgrown gallium nitride and silicon(111)
182.	Growth and characterization of zinc oxide thin films produced by metalorganic vapor phase epitaxy
183.	Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy
184.	Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy
185.	Properties of misfit dislocations in thick silicon epitaxy
186.	Carbon incorporation pathways and lattice site distributions in silicon carbide/silicon(001) and germanium carbide/germanium(001) alloys grown by molecular beam epitaxy
187.	The effects of the surfactant antimony on ordering and phase separation in gallium-indium-phosphide grown by organometallic vapor phase epitaxy
188.	Chemical beam epitaxy of gallium nitride on silicon: Use of silicon carbide as template and selective area growth
189.	Characterization of surface electrochemical reactions used in electrochemical atomic layer epitaxy and digital etching
190.	Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study
191.	Supersonic jet epitaxy of wide band gap semiconductors (Aluminum gallium nitride, Silicon carbide)
192.	I. Mercury-mediated synthesis of intermetallic and oxide materials. II. Synthesis and characterization of precursors for chemical beam epitaxy of lithium niobate
193.	Low-temperature chemically-driven atomic layer epitaxy for II-VI material growth
194.	Growth of chalcopyrite-structure semiconductors zinc tin arsenide and zinc tin phosphide by molecular beam epitaxy
195.	Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition
196.	The growth, epitaxy and reactivity of ultrathin metal films on a metal oxide surface
197.	Red and infrared phosphide materials grown by solid source molecular beam epitaxy
198.	Oxide thin-films: Epitaxy, reactions and interfaces
199.	Incorporation of arsenic in mercury cadmium telluride grown by molecular beam epitaxy
200.	Conducting (silicon-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy: Experiment and theory
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