Gallium nitride - Globe Thesis

Keyword [Gallium nitride] Result: 181 - 200 \| Page: 10 of 10
181.	Band structure and optical properties of lead tungstate, and multiphoton microscopy of lead tungstate and gallium nitride: A combined theoretical and experimental dissertation
182.	Emission mechanisms of indium gallium nitride-based III-nitride heterostructures
183.	Investigation of the point defect structure of epitaxial gallium nitride
184.	Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy
185.	Interfacial stability of titanium, chromium, cobalt, and platinum contacts to gallium nitride and silicon carbide
186.	Growth and characterization aluminum gallium nitride/gallium nitride heterostructures on silicon(111) wafers using various buffer layers
187.	Electrical activation studies of ion implanted gallium nitride
188.	Effects of strain on the optical properties of aluminum indium gallium nitride quaternary alloys and their heterostructures
189.	Growth and characterization of thin and thick gallium nitride
190.	Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering
191.	Chemical beam epitaxy of gallium nitride on silicon: Use of silicon carbide as template and selective area growth
192.	Development of aluminum nitride and gallium nitride for practical applications
193.	Growth of gallium nitride and aluminum gallium nitride thin films using conventional and pendeo-expitaxial growth processes on hydrogen(6)-silicon carbide(0001) and silicon(111) substrates
194.	Strategies to indium nitride and gallium nitride nanoparticles: Low-temperature, solution-phase and precursor routes
195.	Electrical characterization of N-type gallium nitride grown by metalorganic vapor deposition (MOCVD) on sapphire
196.	Indium nitride and gallium nitride grown from the melt at subatmospheric pressures
197.	Characterization of the growth of aluminum nitride and gallium nitride thin films on hydrogen etched and/or cleaned hydrogen-6-silicon carbide(0001) surfaces
198.	Threading dislocation reduction in gallium nitride thin films on sapphire via lateral epitaxial overgrowth
199.	Surface etching of 6H-silicon carbide (0001) and its effects on growth of gallium nitride, aluminum nitride by MOCVD, and silicon carbide by APCVD
200.	Effect of polarity on growth and material properties of gallium nitride grown by ammonia MBE
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