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A New ZnO-SiO2 Low Dielectric Constant High Frequency Microwave Dielectric Ceramics

Posted on:2008-02-19Degree:DoctorType:Dissertation
Country:ChinaCandidate:J L ZouFull Text:PDF
GTID:1101360212489218Subject:Materials science
Abstract/Summary:PDF Full Text Request
With the rapid development of communication businesses, the demands for miniature and functional microwave components used in mobile communication devices have been greatly increased. At the same time, the research and utilization of microwave dielectric ceramics have also achieved remarkable progresses. In order to meet with the requirement for the miniaturization of mobile communication terminal devices, Low Temperature Co-fired Ceramics (LTCC for short) technology and multilayer microwave components have been the research focus. In the middle & High dielectric constant ceramic field, the research on additives and LTCC materials have been developed rapidly and furthermore, have been put into application. Simultaneously, with the communication devices of mobile communication, wireless LAN and military communication developing to higher frequencies, a large market demand emerged for low dielectric constant high frequency microwave ceramics.Recent years, low dielectric constant microwave ceramics have received much interests. New kinds of low dielectric constant microwave ceramics were developed continuously. However, these materials have some problems and disadvantages, such as (1) difficult to sintered at lower temperature; (2) large τf or low Q×f values; (3)the research on cofiring with Ag or Cu was limited. Therefore, it is of much importance to develop new kind of low dielectric constant microwave ceramics used in LTCC technology.The research by author on ZnO-SiO2 ceramic system shows: ZnO-SiO2 ceramic have low dielectric constant of 6 and excellent dielectric properties with lower expenses. But this ceramic system have some disadvantages such as high sintering temperature, narrow sintering range and large negative τf. In this study, the sintering characteristics and dielectric properties of ZnO-SiO2 ceramics were improved by adding additives. The sintering temperature was decreased to 900°C with composite sintering aids. The low-fired ceramics can prepare stable slurry and have good compatibility with Ag electrode. Thus, it can be a promising low dielectric constant microwave ceramics working at higher frequency. Based on these results, nano ZnO-SiO2 ceramic powders with excellent dispersity and properties were obtained by sol-gel method. This study established foundation to prepare miniature multilayer components. The main research results are as follows:1. The sintering characteristics and microwave dielectric properties of ZnO-SiO2 ceramics were investigated systematically at the first time. The sintering characteristics and microwave dielectric properties of ZnO-SiO2 ceramics were improved effectively by MgO and TiO2 addition. A low dielectric constant microwave ceramics with wide sintering rangeand excellent dielectric properties especially near zero τf- was obtained. This results provide a potential material for microwave electronic components working at higher frequency. (1) Itis difficult for ZnO-ySiO2 to obtain a dense structure at high temperature. When the sintering temperature was higher than 1440℃, the ceramic began to melt. Excess SiO2 content can reduce the grain size and inhibit abnormal grain growth. The ceramics with y=0.6 obtained best dielectric properties of εr = 6.23, Q×f= 52500GHz, τf= -55.2ppm/℃. (2) Al2O3 can improve the sintering process by improving the formation of main phase. The sintering temperature was decreased to 1300℃ and the ZnO-0.5SiO2 ceramic with 1wt% Al2O3 addition obtained properties of εr=6.43, Q×f =43500GHz , τf = -48.4ppm/℃. (3) Mg2+ can substitute Zn2+(<50mol%) and form a solid solution in Zn2SiO4 crystalline and thus improved the sintering process, the sintering range is more than 75℃. Zn0.8Mg0.2O-0.5SiO2 ceramic sintered at 1275℃ obtained dielectric properties of εr=6.19, Q×f=49000 GHz , τf= -54.1ppm/℃. (4) TiO2 did not react with host material, thus it can adjust the τf of host material. However, the ceramics had narrow sintering range with TiO2 addition. (5) When MgO and TiO2 were added, ZnO-0.5SiO2 ceramics can be sintered from 1250 to 1325℃. With 10wt% TiO2 addition, Zn0.8Mg0.2O-0.5SiO2 ceramics had an excellent dielectric properties of εr= 8.16, Q×f=43200GHz, τf= -13.7ppm/℃.2. The sintering temperature of ZnO-SiO2 and ZnO-SiO2 ceramics with TiO2&MgO addition (ZMST for short) were decreased to 900℃ by adding composite sintering aids. The low-fired ceramics can prepare stable slurry and have good compatibility with Ag electrode. The low-fired ceramics with low dielectric constant was suitable for LTCC technology and was promising to prepare LTCC microwave components working at millimeter wave. (1) Li2CO3-Bi2O3 can form liquid phases at 598℃ and 720℃. During the sintering process, it can react with host material to form low-melting-point phase Bi4Si3O12. Multiple liquid phases can effectively reduce the sintering temperature of ZnO-ySiO2 from 1400 to 910℃. Bi2O3-SiO2 aids was calcined to form Bi4Si3O12 phase, which can melt at 833℃. The single liquid phase can reduce the sintering temperature of ZnO-0.6SiO2 ceramics form 1380 to 960-990℃. (2) The densities and εr of ZnO-ySiO2 decreased as y increased. Q × f values were closely related with phase composition and microstructure. ZnO-0.6SiO2 ceramics with 5wt°/oLi2CO3-4wt%Bi2O3 obtained properties of εr = 6.65, Q×f= 33000 GHz, τf= -70ppm/℃. (3) As Bi2O3-SiO2 addition increased, densities and εr increased and Q×f decreased slightly. With 3wt% Bi2O3-SiO2 addition, the ZnO-0.6SiO2 ceramics have properties of εr=6.19, Q×f=41800GHz, τf=-52.9ppm/℃. (4) Li2O-B2O3-SiO2 glass have a low soften point(402℃). The mixture from Li2CO3-B2O3 calcined at 600℃ can form a liquid phase at 660℃. Both additives can form a high activity unknown phase with TiO2. These results can decreased the sintering temperature of ZMST to 840-900℃. (5) Thedielectric properties of low-fired ZMST ceramics show a complex variety influenced by phase composition and microstructure. With 3wt% Li2CO3-B2O3 addition, ZMST ceramics obtained optimum properties of εr = 8.84, Q×f = 15500GHz, τf = +17.8ppm/℃. (5)Stable and well dispersive slurry of the low-fired ceramics can be prepared and the green tapes have a glabrous surface. There were no aggregations of the particles. The low-fired ceramics also have good compatibility with Ag electrode. It can be a promising low dielectric constant microwave ceramics for LTCC technology.3. The ZnO-SiO2 nanopowders with particle size of 100-200nm and well dispersity were prepared by sol-gel method at a relatively low temperature. Compared to solid reaction method, the nanopowders prepared by sol-gel method have higher sintering activity, and can be sintered well at 1250℃ and excellent dielectric properties were obtained. These results were useful to further application in thinner dielectric layers.(1) Using Zn(NO3)2·6H2O and Si(OC2H5)4 as precursors, ethanol as solvent, transparent and homogeneous ZnO-SiO2 gel was prepared by controlling gelation process. The gel of ZnO-SiO2 system was formed though the hydrolysis and polymerization of Si(OC2H5)4, and the Zn2+ ion were embedded in the gel network. (2) The gelation of ZnO-SiO2 system and the characteristics of powders calcined from dried gel were influenced by process parameters. The transparent gel and suitable gelation time were obtained under the condition of c(precursors) = 0.5-1mol/l, T(gelation temperature) = 10-40℃, pH = 1.5-3, [H2O]/[Si]=0-8/1. At the same process condition, the nanopowders with particle size of 100-200nm and well dispersity were obtained when the Si(OC2H5)4 were hydrolyzed and polymerized completely. (3)The ZnO-SiO2 nanopowders prepared by sol-gel method have higher sintering activity, and compared to solid reaction method, it decreased the sintering temperature more than 150℃ and increased the Q×f values from 52500 to 67500GHz.
Keywords/Search Tags:Microwave dielectric ceramics, Low Temperature Co-fired Ceramic, Low dielectric constant, ZnO-SiO2, Dielectric properties, Sol-gel method
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