| With the rapid development of electronics and information technology, the requirements for miniaturization, integration and high frequency used in electronic components have been greatly increased. At the same time, selecting the appropriate material with silver electrode to achieve sintered at low temperatures, thus making multi-component or to passive components buried in multilayer circuit board becoming an inevitable outcome of the above-mentioned requirements. At present, the LTCC is the best in all of the packaging technology, the use of low temperature co-fired ceramic (LTCC) technology to prepare the chip passive integrated devices not only have high current density, high-frequency and high-Q characteristics, but also have high reliability, excellent electrical properties, as well as the transmission characteristics and hermeticity performance.Recent years, low dielectric constant ceramics have received much interests. New kinds of dielectric constant ceramics were developed continuously. However, these materials still have some problems and disadvantages, such as (1)it is difficult to sintered at lower temperature;(2)it has large TCE values, and can not meet the need of the high frequency chip; (3)the research on co-fired with Ag electrode was limited, and also little refer to tape casting on co-fired with Ag electrode. Therefore, it is of great significance to develop new kind of low dielectric constant ceramics that is fit for industrial application and also meets the requirements of LTCC.The research on B2O3-SiO2-AlF3 ceramic system shows:B2O3-SiO2-AlF3 ceramic have the electrode constant of 5.5 and excellent dielectric properties. This article focuses on adding the nucleating agent P2O5, controlling the sintering process conditions, as well as using mixed effects to control the crystal structure and microstructure of materials, and thus to control the dielectric properties and sintering characteristics. The main results of this study are as follows: (1) The sintering characteristics and dielectric properties of the high boron silicon B2O3-SiO2-AlF3 system was investigated in this work. Using mixed effects of the lithium-ion and sodium ions to improve the ceramic sintering behaviors and dielectric properties. Finally we obtain a high-frequency and low dielectric ceramic that has wide sintering range, dielectric constant of 5 or so, high density, high quality factor and near-zero of the temperature coefficient, which provides a new preparation options for high-frequency and low-k ceramic electronic components. The oxyfluoride glass-ceramics/silicon dioxide system added the nucleating agent of P2O5 has broad sintering temperature,but it also has mangy pores and defects.(2) First the design of material composition is the introduction of fluoride into the glass phase under the leadership of the low-k film thinking of semiconductor technology. The use of fluoride ion with high electro negativity, which have the strong binding effect with the system electronics, so as to reduce the dielectric constant and dielectric loss. At the same time, the appropriate use of AIF3, on the one hand, is a easy way for F introduced into the glass system. On the other hand, the introduction of Al to make the system easy to crystallization during sintering and to form aluminum oxide or other metal aluminate ceramic grains which lead to the low-temperature co-fired ceramics has a good mechanical properties.(3) Researching and analysising the tape casting technology of high boron silicon-B2O3-SiO2-AlF3 system added the nucleating agent of P2O5, as well as the performance of cofiring with silver electrode, In order to master the tape casting technology. |
PDF Full Text Request