| In this paper, the key issue consisting of three principal aspects has been discussed, as the following:(1) Firstly, taking an example of the electrostatic accelerator, the configuration and operating principle of the double1.7MV tandem accelerator are illustrated, and the double beam irradiation chamber of accelerator-implanter interface system is also introduced briefly; Secondly, the discussions on the essential feature of interaction between Mev-ions and matter and some quantities which are associated with the energy loss of projectile ions in matter are performed, including the advantages of application of ion beam analysis and ion implantation on materials science; Thirdly, we have paid much attention to the core figurations of this facility-a source of negative ion by cesium sputtering (SNICS) and high voltage system, and described the constituent parts of ion source and operating principle, as well as the generation, measurement, calibration and maintenance of high voltage.(2) It is creative to build a low-energy cluster ion implantation chamber between extraction terminal of ion source and accelerator tube. In this chamber, by means of several of small carbon cluster ions from ion source, to explore a feasible route of graphene synthesis at low energy. At first, a straightforward route, similar to ion assistant deposition, was employed to deposit some carbon cluster ions onto the surface of silicon, and obtained a sort of amorphous carbon film in several nanometers; And then, in the light of the schematic of Faraday Cup, we designed a new four-position sample holder, which can be used to monitor ion current and implant desirable ions to three substrates continuously instead of more time consumptions; Finally, we selected various of carbon cluster ions with the different dosages at20keV, to implant into the Ni/SiO2/Si, combined with proper thermal treatments, few-layer graphene were fabricated successfully. According to the results of Raman spectrum, we also discussed the relationship between graphene layers and implantation dosage. (3) MeV-proton beam or Li ion beam was produced by the double1.7MV tandem accelerator to analyze some samples, including RBS, RBS/Channeling, ERD, NRA. Especially, by means of the RBS-SIMNRA program integrate method, it is excellent to obtain some quantitative results of the samples, which indicates that it is a versatile tool for researcher to focus on materials science. The predominate work is listed as:(I) The thickness of Ni film on the surface of Graphene matrix Ni/SiO2/Si was measured;(II) The concentrations of the surface element and impurity of Ti/SiO2prepared by magnetron sputtering were analyzed in quantitative;(III) The components of TiBCN coatings which were fabricated by multiple arc ion deposition were measured, and the formation mechanism of atomic bonding during the deposition process was also discussed under the different N2fluxes;(IV) The ferroelectric BiFeO3film was prepared by sol-gel method, and we succeeded in achieving its stoichiometric ratio by RBS, and investigated its elemental depth profile in the case of annealing at500℃;(V) Improvement for RBS/Channeling experiment was proposed on the base of a computerized control method of RBS/Channeling technique which was not available for unstable ion beam transport; In accordance with the new method, the RBS/Channeling spectra of single crystal silicon orientated (100) and InP (Fe) samples under the different anneal temperatures were achieved, and the results were also discussed.(VI) Selecting3.2MeV C2+as incident ions, the hydrogen profile of solid sample was probed by ERD. And used a nuclear reaction11B(p, a)8Be to detect the concentration of boron in the thin film of TiBN coating. |
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