Atomic-Layer-Deposited Preparation Of Vanadium Pentoxide Thin Films And Their Optical And Electrical Properties

Vanadium pentoxide has been extensively studied due to its unique optical and electrical properties.These properties bring vanadium pentoxide great research value in many fields such as energy storage,infrared detection,electrochromism,gas sensing,catalysis,and so on.In recent years,vanadium pentoxide ultra-thin films have become a hot research hotspot due to their excellent properties with the development of nanotechnology.However,for the vanadium pentoxide ultra-thin films,it is difficult for the traditional thin film deposition technics to achieve precise control of the film thickness and uniformity on the complex structure.This also makes the traditional thin film deposition technics fail to meet the development needs of the miniaturization and complex structure of the devices in various fields.In view of this application demand,the atomic layer deposition technology is proposed to solve the problem of growth and doping control for vanadium pentoxide thin films.By controlling the growth conditions and the reaction precursors during the process of the atomic layer deposition,vanadium pentoxide thin films with controllable thickness at nanometer level were prepared and film doping was achieved.The optical and electrical properties of the prepared ultra-thin film are studied,which lays the foundation for the application of vanadium pentoxide thin film in optical devices and energy storage applications.The main contents and achievements of this paper embody in the following aspects mainly:First,by changing the growth conditions,the growth of vanadium pentoxide thin film is regulated,and the thickness,morphology,composition and crystal structure of the film are studied.It is found that the growth mode of the film belongs to the Stranski-Krastanov model,which contains the first layered growth and then island growth.The difference in the morphology,growth rate and crystal structural characteristics of the two modes is analyzed and compared.It is proved that the difference between the two growth modes is determined by the tendency to grow of along the [010] direction of vanadium pentoxide crystal.Secondly,the dependence of refractive index,extinction coefficient,dielectric constant and other optical parameters on the structural properties of vanadium pentoxide thin films were studied.The influence of the structure,defect and stress on the band structure,dielectric constant and fluorescence characteristics of the f vanadium pentoxide thin film was revealed by analyzing the optical properties of the film corresponding to the different growth modes,which provided a basis for the control of the structure and optical properties of the thin films.Thirdly,the reaction precursor was added to the growth of vanadium pentoxide to study the composition and dopant of vanadium pentoxide thin films.The vanadium pentoxide films containing water,zinc,titanium and aluminum were obtained by the control of the reaction conditions.The effects of doping on the structure,composition and optical properties of the films were analyzed.Finally,the electrical and electrochemical properties of vanadium pentoxide thin films deposited by atomic layer deposition were studied.The electrical resistance of different doped films was studied,and the temperature resistance coefficient of the films was measured.The metal insulator transition characteristics of vanadium oxide thin films have been studied.The effect of the vanadium oxide film on the lithium ion battery on the molybdenum substrate is preliminarily explored,and the influence of the structural characteristics of the vanadium oxide on the specific capacity of the lithium ion battery is analyzed.It provides a technical reference for the large-scale application of the vanadium oxide cathode prepared by the atomic layer deposition in the lithium ion battery.