ALD Growth And Properties Of Al-doped Ga₂O₃ Thin Films

Ga₂O₃,as the third-generation wide band gap semiconductor,has good chemical stability and thermal stability,and shows good development prospects in solar blind ultraviolet detectors,transparent conductive films and so on.However,the research on the preparation process of Ga₂O₃thin film in the world is still in its infancy,and the doping of Ga₂O₃thin film has not shown good research results.Therefore,this paper focuses on the preparation process and doping of Ga₂O₃thin film.In this paper,Atomic Layer Deposition?ALD?equipment is used to prepare Ga₂O₃thin film.ALD is a low-temperature growth thin film deposition process,which has the characteristics of shape retention and uniform film formation.Its single-atomic layer deposition makes the composition of the thin film atomic range controllable In order to facilitate the development of the doping process,during the internship of the microelectronics institute,some semiconductor thin films were prepared using ALD equipment,including hafnium oxide?Hf O₂?thin films,aluminum nitride?Al N?thin films,etc.,mastering the basics of ALD deposited semiconductor thin films method.Using ALD equipment to prepare Ga₂O₃thin films on silicon substrates and sapphire substrates respectively,after conducting AFM,SEM,XPS,UV-VIS and other series of tests on the thin films,it was concluded that the thin film samples are more uniform,of higher quality,and have Good optical properties,including the root mean square roughness of the film is 0.528nm,the ratio of Ga and O atoms is 0.68,the transmittance is greater than 70%in the ultraviolet and visible range,the band gap width is 4.93e V,which is close to the reported 4.9e V.Next,the Ga₂O₃film was doped with Al,and after the same test,it was concluded that as the Al content of the film increases,the film surface uniformity,the proportion of lattice oxygen,and the optical transmittance are improved,and Ga₂O₃is also achieved The film forbidden band width is adjustable in the range of 4.93-5.23e V,making Ga₂O₃film more widely used in semiconductor devices.