Research On Resistive Memory Device Based On Zinc Oxide,Black Phosphorus And Other Two-dimensional Material Thin Films

With the rapid development of 5G communication technology and the acceleration of the globalization of information,the speed of information transmission has been greatly improved,and accompanied by explosive growth of mobile data.However,the rapid development of informatization has also brought challenges to other fields.For example,in the field of memory,the development of technology means higher requirements for the performance of memory:read and write speeds and storage capacity.At the same time,traditional semiconductor memory is gradually approaching its physical limit,and the development of miniaturization is unsustainable.Therefore,the innovative development of memory technology has become an urgent issue.However,as far as the resistive memory of traditional semiconductors is concerned,although there have been many studies on its working mechanism,there is still a lack of analysis of the evolution of the working process of the device and the cause of device failure.Therefore,this article mainly chooses the traditional semiconductor material zinc oxide to prepare Ag/ZnO/Pt sandwich resistive memory,and systematically studies three types of resistive memory with different structural designs,discusses the influence of the preparation parameters on the device,and further The structure has been optimized and improved.At the same time,through detailed performance testing and I-V characteristic analysis,we observed two abnormal resistance state phenomena in Ag/ZnO/Pt devices,namely"transition resistance state" and "resistance state degradation" phenomenon.We proposed a new middle resistance state(MRS)hypothesis,explaining the source of anomalies in zinc oxide resistive memory,and revealing the reasons for the poor durability of zinc oxide resistive devices.Then,combined with the results of the first-principles simulation calculations,a new device structure was designed,and the hafnium oxide HfO2 layer was introduced into the zinc oxide ZnO resistive memory,which greatly improved the switching ratio and durability of the device,and further verified the "middle resistance theory.Finally,we have made useful explorations and made some progress in the direction of two-dimensional material resistive memory,and successfully prepared a two-dimensional material based resistive memory.Among them,using black phosphorus single crystal flakes of high crystalline quality passivated with hafnium oxide HfO2,a black phosphorus resistive memory with good device performance is prepared,with durability of more than 100 direct current(DC)cycles,on/off ratio about 102.At the same time,according to the results of the comparative experiment,the physical mechanism leading the black phosphorus resistance change phenomenon and the role of the hafnium oxide layer in it were explored.In addition,the successfully prepared FePS3 and GeSe2 resistive memory also show very obvious resistive properties.The research progress of these two-dimensional material resistive memory will strongly promote the development of two-dimensional materials in the field of resistive memory.In summary,we have explored the evolution of the dominant mechanism in the zinc oxide resistive memory in detail,proposed and verified the "intermediate configuration"theoretical hypothesis,and designed a new HfO2/ZnO double-layer resistive device based on this.Greatly improved device performance.At the same time,the research experience of resistive memory is combined with two-dimensional materials to prepare single crystal black phosphorus resistive memory with good performance.These results will help to promote the research progress of traditional semiconductor resistive memory or new two-dimensional material resistive memory.