Preparation Of Gallium Oxide Films And Study Of The Performance Of Resistive Memory Basic On Gallium Oxide

As one of the wide band gap semiconductors,monoclinic-crystal system gallium oxide(Ga₂O₃)is a promising new type of uv optoelectronic material.As a member of wide band-gap semiconductor,it has many advantages including high mechanical strength,stable physical and chemical properties and high transmittance in the visible range.It has drawn widely attention relying on the excellent optoelectronic properties and significant applications in high-power devices,short-wavelength semiconductor light-emitting devices,transparent field-receiving transistors,solar blind UV detection,in recent years.The properties of gallium oxide are directly related to its crystal structure,how to produce high quality gallium oxide thin films has been a hot topic in research.And,with the rise of new type resistive random memory(RRAM)rising,most of the binary oxides have been reported with resistance change characteristics.Ga₂O₃,because of its excellent broadband gap and sensitivity to the oxygen content,is believed to be the ideal RRAM candidate material,however most of the reported Ga₂O₃ based RRAM performance did not achieve good durable performance,and poor consistency between voltage and current(I-V)is also detrimental to practical applications.In this paper,the effects of different annealing atmospheres on gallium oxide crystallization will be studied first,and then a gallium oxide based RRAM with better performance will be constructed and integrated into the self-driven pressure point system.Firstly,The Ga₂O₃ films were grown on an Al₂O₃(0001)substrate by a radio frequency magnetron sputtering process,the obtained samples were annealed at 800°C for 30 minutes in air and vacuum atmosphere,respectively.The effects of annealing atmosphere on the crystal structure,microstructure,transmittance and band gap of Ga₂O₃ thin films were investigated in detail.It can be seen from the X-ray diffraction spectrum(XRD)that the film annealed showed better crystallinity with a monoclinic structure and the tructure analysis revealed a clear out-of-plane orientation of?-Ga₂O₃(2 01)||Al₂O₃(0001).The average transmittance of the films in the visible wavelength range exceeded 90%and the optical band gap of the films varied from 4.93 to 5.11 e V which were observed by spectrophotometer.Then,on the basis of magnetron sputtering deposition process,RRAM based on Ta/Ga₂O₃/Pt structure was manufactured,which could reach 3×10⁶ switching cycles under pulse endurance condition,and achieve a smaller Set voltage distribution and consistency of I-V curve.The RRAM resistance change mechanism of based on gallium oxide layer are studied,through the I-V curves and log-log plots of the Set and Reset processes with resistance and temperature illustrated the switching mechanism.The LRS was mediated by Ohmic conduction through the localized path in the high Schottky barrier at the Ga₂O₃/Pt interface,while the HRS exhibited the SCLC mechanism in which the carriers hopped among the remaining trap sites.According to Arrhenius formula,the activation energy(Ea)is calculated about 0.108 e V.On this basis,we propose a corresponding resistance model for the RRAM of the structure.Finally,the integration of RRAM with other devices to form a new system to improve system performance or realize new functions is also the focus of RRAM application.In this paper,a Set of output voltage circuit based on PZT power generation chip is designed.Then we combined it with the prepared RRAM device to build a self-powered,self-storage/erasable data sensing memory integration system.This system can not only realize the automatic writing of data,but also erase the data at any time,thus getting rid of the extra erasure equipment and realizing the reuse.The self-drive system does not need external power supply,can automatically record data,has a variety of application prospects.