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Fabrication And Characterization Of Tin Oxide-based NFTO-TiO2 Composite Transparent Conductive Films

Posted on:2020-03-07Degree:DoctorType:Dissertation
Country:ChinaCandidate:L K WangFull Text:PDF
GTID:1361330620457225Subject:Materials science
Abstract/Summary:PDF Full Text Request
Although SnO2-based transparent conductive films have been extensive used in the fields of low-emissivity glass?Low-E?and thin film solar cells,it is a very urgent task to increae its optical and electrical properties at present.In this paper,some researches have been done in order to further reduce its emissivity.The processing parameters of F doped SnO2?SnO2:F,FTO?films were optimized by adjusting the starting materials?fluorine source?,temperature and film thickness.The electrical properties of FTO films were improved by co-doping with Nb and F.Based on first-principles,the cell structure,charge density difference,Bader charge,band structure and electronic density of states of Nb and F co-doped SnO2?NFTO?were calculated.The NFTO/r-TTO composite film was fabricated by aerosol-assisted chemical vapor deposition?AACVD?with NFTO film as the functional layer and rutile TiO2?r-TiO2:Sn,r-TTO?as the transition layer.Low-E glasses with lower emissivity were obtained.Aiming at the problems existing in the application of front electrode of thin film solar cell,a TiO2 passivation layer was deposited on the FTO glass,which improved the anti-reduction ability of FTO film.A nano-flower shaped surface morphology with higher haze was obtained also.The structure,morphology,optical and electrical properties of prepared thin films were studied by X-ray diffractometer,transmission electron microscope?TEM?,field emission scanning electron microscope,atomic force microscope,ultraviolet-visible spectrophotometer,Fourier infrared spectrometer,four-probe square resistor test and Hall effect meter.The distribution and chemical status of elements in films were analyzed by X-ray energy dispersion spectrum attachments in TEM,X-ray photoelectron spectroscopy and glow discharge spectrometer.The work function and energy level distribution of thin films were studied by ultraviolet photoelectron spectroscopy.The main results are as follows:The best optical and electrical properties of FTO film are obtained when using SnF2as the fluorine source,substrate temperature is controlled at 500oC,and the film thickness is maintained at 648 nm.The average transmittance in visible region,resistivity and the figure of merit are 76%,3.89×10-4?·cm and 17.9×10-3?-1,respectively.A highly dispersed conduction band bottom is formed in SnO2 by doping with Nb and F together,Fermi moves up and more delocalized charges appeare around O and F.In addition,Nb and F co-doped SnO2 film has a reduced lattice distortion compared with the FTO film,the grain size and preferred orientation are largely increased.When the concentration of F in precursor solution is 20 at.%,and the concentration of Nb is 1 at.%,the NFTO film obtain the highest carrier concentration of 7.463×1020 cm-3 and the lowest resistivity of 3.71×10-4?cm,the figure of merit of 22×10-3?-1 is obtained.The average transmittance of NFTO films in the visible region is about 80%,and the infrared reflectance is about 92-96%.The crystallinity and degree of order of NFTO film are improved by fabrication of NFTO/r-TTO composite film,the mismatch between NFTO film and glass substrate is reduced,and the lattice distortion,structural defects and residual stress in the film are significantly reduces.The work function of r-TTO and NFTO are matched,and the heterogeneous structure formed between them is conducive to the electrons in TiO2transfer to NFTO film,which increase the carrier concentration of NFTO film.Compared with FTO film,the carrier concentration and Hall mobility of NFTO/r-TTO composite film are obviously improved,the sheet resistance?5?/??and resistivity(2.82×10-4?)are reduced by 40%and 37.2%,respectively.The average transmittance of the composite film is above 78%,and the reflectance in the mid-far infrared region is significantly improved,emissivity of 0.08 is obtained for NFTO/r-TTO film,which is reduced 33%compared with FTO film.TiO2 passivation layer with a certain thickness can effectively prevent the underlying FTO film from being reduced by hydrogen plasma.The anti-reductive properties of TiO2/FTO composite film has significantly improved,presenting a nano-flower shaped appearance,obtaining high surface roughness and haze.A high haze value of 36.7%is obtained when the approximate thickness of the prepared TiO2 layer is 213 nm.
Keywords/Search Tags:transparent conductive film, SnO2, co-doping, optical and electrical properties, composite film
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