Design,Synthesis And Opto-electronic Properties Of High-Mobility Organic Fluorescence Molecules With Triple Bonds

Organic optoelectronic materials have many potential applications in the field of electron/photo-electron due to their advantages of low cost,easy chemical modification and solution processing,and have made a series of remarkable achievements,which have attracted extensive attention of scientists.Organic photoelectric materials are usually solid in application,and their properties are closely related to their aggregation state.Compared with films and polycrystals,organic single crystals have the advantages of ordered and clear stacking structure,free defects and so on,which are easier to obtain excellent photoelectric performance.However,there is a lack of high-performance organic photoelectric materials with high mobility and strong fluorescence emission,which hinders the development of organic light-emitting transistors?OLETs?,organic solid-state laser?OSLs?and phototransistors.Herein,a series of novel high-mobility organic fluorescence molecules with triple bond were designed and synthesized,which based on the current situation of high-performance multifunctional organic photoelectric materials with high mobility and strong fluorescence emission.The main contents are as follows:1.Two novel triphenylamine-ethynyl-based pyrene compounds with position of different substituted groups,1,6-DTEP and 2,7-DTEP,were designed and synthesized,and their single crystals were successfully grown by slow solvent-evaporation method.The fluorescence microscope shows that the single crystal of 1,6-DTEP is rhombus,the single crystal of 2,7-DTEP is ribbon,and the photoluminescence quantum yields?PLQYs?of 1,6-DTEP and 2,7-DTEP single crystals are 32%and 35%,respectively.Furthermore,single crystal organic field effect transistors?SC-OEFTs?based on 1,6-DTEP and 2,7-DTEP single crystals were fabricated,and the photosensitivity of their SC-OFETs was studied in detail.The highest mobility was 2.1 cm² V^-1 s^-1 for 1,6-DTEP and 0.025 cm² V^-1 s^-1 for 2,7-DTEP.The organic phototransistors based on 1,6-DTEP and 2,7-DTEP single crystals exhibit ultrasensitive 370 nm UV response with high photosensitivity of 1.60×10⁵ and 4.35×10³,ultrahigh photoresponsivity of 2.86×10⁶ A W^-1 and 1.04×10⁵A W^-1,and detectivity?D*?of approaching 1.49×10¹⁸ Jones and 5.28×10¹⁶ Jones,respectively.2.Two 9,10-site anthracene compounds with two different substituents,9,10-DTEA and 9,10-BDEA,were designed and synthesized,and their single crystals were successfully grown by slow solvent-evaporation method.The fluorescence microscope shows that single crystals of 9,10-DTEA and 9,10-BDEA are both ribbon,and the PLQYs of 9,10-DTEA and 9,10-BDEA single crystals are 98%and 99%,respectively.Furthermore,SC-OEFTs based on 9,10-DTEA and 9,10-BDEA single crystals were fabricated,and the photosensitivity of their SC-OFETs was studied in detail.The transistors showed the highest mobilities of 0.45 cm² V^-1 s^-1 and 0.15 cm² V^-1 s^-1 for 9,10-DTEA and 9,10-BDEA,respectively.The single-crystal phototransistors based on 9,10-DTEA and 9,10-BDEA exhibit ultrasensitive 370 nm UV response with high photosensitivity of 1.03×10³ and 3.45×10⁴,ultrahigh photoresponsivity of 7.19×10⁵ A W^-1 and 1.50×10⁵ A W^-1,and detectivity?D*?of approaching 1.40×10¹⁶Jones and 1.60×10¹⁷ Jones,respectively.3.Two thiophene compounds with different molecular configurations,4,8-DTEBDT and 2,6-DTEBDT,were designed and synthesized,and their single crystals were successfully grown by slow solvent-evaporation method.The fluorescence microscope shows that single crystals of 4,8-DTEBDT and 2,6-DTEBDT are both ribbon,and the PLQYs of 4,8-DTEBDT and 2,6-DTEBDT single crystals are 51%and 45%,respectively.Furthermore,SC-OEFTs based on 4,8-DTEBDT and 2,6-DTEBDT single crystals were fabricated,and the photosensitivity of their SC-OFETs was studied in detail.The transistors showed the highest mobilities of 0.25 cm² V^-1 s^-1 and 0.06 cm² V^-1 s^-1 for 4,8-DTEBDT and 2,6-DTEBDT,respectively.The single-crystal phototransistors based on4,8-DTEBDT and 2,6-DTEBDT exhibit ultrasensitive 370 nm UV response with high photosensitivity of 7.36×10⁴ and 3.87×10³,ultrahigh photoresponsivity of 9.60×10⁵ A W^-1 and 6.43×10⁴ A W^-1,and detectivity?D*?of approaching 5.68×10¹⁷Jones and 2.99×10¹⁶ Jones,respectively.