Fabrication And Characterization Of Organic Field-effect Transistors Based On Novel Small Molecules And Ambipolar Polymers

Recently,organic field-effect transistors(OFETs)have attracted much attention because of its advantages and the potential applications in the organic electronics industry.One key component in OFETs is the relationship between the structure and property of organic semiconductors.At present,the research in this area is mainly focused on the material design and charge transfer mode for organic field effect transistors.Therefore,based on the development status and problems of OFETs,this paper studies the physical and chemical properties of organic semiconductor materials and the preparation and characterization of devices.The following are the research results:1.The physical and chemical properties of pyrene derivatives were tested by UV-Vis spectrograph and TGA.The characterizations of single crystals were tested by XRD.The results of single crystal show that π-π interaction was the main force between TPh OP and TPh Se P,while TPh SP was dominated by S-S interaction.The thin films of three semiconductor materials were prepared by vacuum deposition at different substrate temperatures.The test tesults show that the device performances were changed with the substrate temperature changing.The best performance were shown at Tsub = 20℃,and the performance of TPh Se P is the best in the three small materials with the highest mobility of 0.04 cm2/Vs.2.The physical and chemical properties of anphthanlene derivatives were tested by some characterization methods.The thin films of three semiconductor materials were fabricated by vacuum deposition at different substrate temperatures.The test results show that the device were mainly p-type.All the derivatives were obtained the best performance when deposited Tsub = 60℃.The mobility are 3.42 × 10-2 cm2/Vs,0.53 cm2/Vs and 5.40 × 10-2 cm2/Vs for the 2YBN,2XBN and 2QBN respectively.3.The physical and chemical properties of anphthanlene derivatives were tested by some characterization methods.The thin field effect transistor devices of the polymer system are prepared at the different annealing substrates.The results show that the polymers 1-4 were bipolar materials and the polymer 5 exhibits p-type.The polymer 1,3 and 4 exhibit balanced bipolar performance and polymer 4 show the highest mobility up to 0.46cm2/Vs at Tsub =120℃.