Hydrogen determination in pulsed PECVD silicon nitride thin films by RBS, ERDA, and CARS

The Lanford and Rand FT-IR correlation for PECVD silicon nitride thin films was investigated for it validity for use with pulsed PECVD silicon nitride thin films. Several films with different deposition parameters and showerhead configurations were compared to the Lanford and Rand correlation by RBS and ERD using a 1.7 MeV Tandatron accelerated He++ particles. The Lanford and Rand Correlation was found to hold true for pulsed PECVD in the same proportions as for PECVD.; A CARS probing instrument was also setup to probe the plasma region of the pulsed PECVD reaction in an attempt to correlated the SiH4 reactant gas utilization to the hydrogen content of the deposited films for use as a real-time monitor. It was found that a utilization of 45% or better of the SiH4 gas provided the "best" quality film.