Low Temperature Process Pecvd Preparation Of Polycrystalline Silicon Thin Film Research

The cost of crystalline silicon and polycrystalline silicon solar cell is high steadily, amorphous silicon and amorphous silicon thin film solar cell has "optical-induced degradation" . Polycrystalline silicon thin film solar cell possesses the excellences : it not only has high efficiency and long life of crystalline silicon and polycrystalline silicon solar cell,but also has easy material preparation technics and low cost of amorphous silicon thin film solar cell , because of this , polycrystalline silicon thin film solar cell will be the most promising candidate of the novel solar cell. Then the investigation of polycrystalline silicon thin film have great significance.Base on this purpose ,we use plasma enhanced chemical vapor deposition (PECVD) prepare polycrystalline silicon thin film,and investigate other structure material related to polycrystalline silicon thin film solar cell. The following studies have been finished:1) For preparing polycrystalline silicon thin film cell, i-layer μc-Si:H thin film must be doped.We investigate doped P(phosphor) polycrystalline silicon thin film.This paper use Raman, SEM and XRD to study the microstructure of doped P(phosphor) polycrystalline silicon thin film.We study the P doped efficiency of surface of the thin film and the traits of rapid photo-annealing on the thin film.2)I-layer is very important to the preparation of polycrystalline silicon thin film solar cell ,we use RF-PECVD systematically to invetigate The influences of these parameters including ratio of SiH₄, substrate temperature, material of the substrate, Rf power on the crystalline and electric character of μc-Si:H thin film.3) For preparing high quality of polycrystalline silicon thin film ,we must know the growth kinetics of μc-Si:H thin films. The growth kinetics of μc-Si:H thin films is have been studied elementarily in this paper.