| The study of electronic transport in nanoscale devices like thin inversion layers, nanowires and carbon-based devices like graphene and graphene nanoribbons requires an accurate description of their band structure. The band structure of the devices confined in either 1D or 2D may not be described accurately enough by their bulk band structure as the excitation spectrum may indeed depend upon the geometry of the device. It is shown in this work that the use of empirical pseudopotentials coupled with the supercell method can provide a sufficiently accurate description of the devices under consideration. Furthermore, we discuss semiclassical transport through Monte Carlo simulations after evaluation of scattering rates including electron-phonon interactions and surface roughness scattering. The electron-phonon interactions are modeled employing both deformation potential approach and rigid-ion approach. The surface roughness scattering is treated with an atomistic flavor going beyond the "usual" phenomenological model with an effective mass approach. |
