| The effectiveness of two-step annealing as opposed to isothermal annealing was demonstrated. The efficiency of two-step annealing as compared to high-temperature annealing also was demonstrated.; The deep levels observed from both Hall effect and lifetime measurements were eliminated by Hg saturated annealing. Lifetime fittings of these samples yielded a SRH limited character.; High-temperature annealing of the As doped samples resulted in samples with a higher composition (0.1--1.1% higher) in comparison with as-grown samples as revealed by lifetime fitting and room temperature FTIR measurements. In the second chapter the MBE growth system, the growth mechanism, and the growth modes were described. The third chapter described HgCdTe material characteristics and the high quality growth of alloys and superlattices. P-type doping by direct alloy and superlattice doping methods was investigated.; The activation energies of the arsenic doped layers were found to be 10meV or less below the valence band edge of HgCdTe for Cd mole fractions of 0.36 or lower. The activation energies obtained by Hall coefficient fittings were lower than those calculated using an empirical formula, and were closer to each other than the formula predicted. |
