Optical and electrical characterization of high resistivity semiconductors for constant-bias microbolometer devices

The commercial market for uncooled infrared imaging devices has expanded in the last several decades, following the declassification of pulse-biased microbolometer-based focal plane arrays (FPAs) using vanadium oxide as the sensing material. In addition to uncooled imaging platforms based on vanadium oxide, several constant-bias microbolometer FPAs have been developed using doped hydrogenated amorphous silicon (a-Si:H) as the active sensing material. While a-Si:H and the broader Si1-xGex:H system have been studied within the context of photovoltaic (PV) devices, only recently have these materials been studied with the purpose of qualifying and optimizing them for potential use in microbolometer applications, which demand thinner films deposited onto substrates different than those used in PV. The behavior of Ge:H is of particular interest for microbolometers due to its intrinsically low resistivity without the introduction of dopants, which alter the growth behavior and frustrate any attempt to address the merits of protocrystalline a-Ge:H.;This work reports the optical, microstructural, and electrical characterization and qualification of a variety of Si:H, Si1-xGex:H, and Ge:H films deposited using a plasma enhanced chemical vapor deposition (PECVD) process, including a-Ge:H films which exhibit high TCR (4-6 -%/K) and low 1/f noise at resistivities of interest for microbolometers (4000 – 6000 Ω cm). Thin film deposition has been performed simultaneously with real-time optical characterization of the growth evolution dynamics, providing measurement of optical properties and surface roughness evolutions relevant to controlling the growth process for deliberate variations in film microstructure. Infrared spectroscopic ellipsometry has been used to characterize the Si-H and Ge-H absorption modes allowing assessment of the hydrogen content and local bonding behavior in thinner films than measured traditionally. This method allows IR absorption analysis of hydrogen bonding and other IR modes to be extended to arbitrary substrates, including absorbing and/or device-like substrate configurations not amenable to traditional methods of assessing hydrogen related absorption using infrared transmission measurements.;In addition to novel optical assessments of hydrogen in Si1-xGe x:H films, the role of carrier type in a-Si:H has been studied, with n-type material providing a consistently higher TCR and 1/f noise character than p-type material for films of similar resistivity. As the introduction of dopant gas complicates microstructural growth, assessment of undoped material was performed, finding that only Ge-rich films possess suitable resitivities for electrical measurement.;The inclusion of nanocrystalline material into otherwise amorphous films has been explored in both Si:H and Ge:H, finding that decreases in resistivity and TCR were not accompanied by a decrease in the 1/f noise character. This suggests that mixed (a+nc) Si1-xGex:H material may be less suitable for microbolometer applications than optimized amorphous material.