| In this paper, a systematic investigation of electronic structure of selected quantum confined semiconductor materials is performed utilizing the empirical pseudopotential method (EPM). A consistent method of calculating the discrete “band” structure of selected quantum confined structures including the quantum film with flat parallel walls, the quantum wire modeled with square cross-section, the quantum dot modeled as a cube, right square prism, and sphere is presented. The discrete “band” structure of these quantum confined models is mapped onto the bulk band structure and the corresponding “band” edges and gap are calculated. Where present, the high-symmetry point crossover of the “band” gap and other variations of the “band” edges with size will be presented. The method will also be applied to calculation of the electronic structure of quantum confined Ge. The results will be compared with current theoretical and experimental studies of these systems and present new features. |
