Ultra low signals in ballistic electron emission microscopy

The extension of Scanning Tunneling Microscopy known as Ballistic Electron Emission Microscopy (BEEM) was expanded to allow useful data collection at lower signal levels than previously possible, and a critical BEEM shortcoming was discovered and quantified. As a separate effort, a new method for measuring SB-type step energies on Si(001) SA-type steps that under some circumstances is more accurate than previous methods was used and will be presented. Finally, extensive modifications to a Scanning Tunneling Microscope used for most of this research will be presented.; First, it will be shown theoretically and experimentally that by amplifying the hot BEEM electrons that make up the useful BEEM signal before they are thermalized, internal gain can be applied specifically to these electrons without amplifying standard BEEM noise sources. It will be shown that BEEM with single hot electron sensitivity (approximately a factor of 1000 improvement in the minimum detectable BEEM signal) is attainable with modified commercially existing avalanche photodiodes.; With this new low-signal capability, it was obvious that a new BEEM-like signal was being detected. We have discovered that photons generated by STM tunneling will create a false signal in most BEEM samples. Furthermore, we have characterized this effect which we call "STM-PC" and it will be demonstrated with Pd/SiO2/Si and Au/SiO2/Si samples that this false signal closely mimics BEEM and is easily confused for BEEM. We will discuss ways to separate real BEEM from this new effect.; Separately, thermally generated kinks on A-type steps on the Si(001) surface were counted and analyzed to find the SB-type step energy. Previous work by others was extended by counting a new type of feature, the "switch" kink, to allow a more accurate determination of the energy of SB-steps in the presence of defects that can bow steps and cause non-thermal kinks. Considerable data collection along with this new extension allowed a more accurate determination of the SB-type kink energy than before and the first experimental evidence that it increases with tensile strain on the Si(001) surface.; Modifications to an Omicron Variable Temperature Scanning Tunneling Microscope (VT-STM) will be presented. The VT-STM will be moved to the Electrical Engineering Department cleanroom of The Ohio State University and will allow in-situ studies of Molecular Beam Epitaxy (MBE) grown samples. Modifications, repairs, and operating procedures will be discussed for the VT-STM and supporting hardware.; Last, work on Low Temperature Grown Gallium Arsenide (LTG-GaAs) will be presented. The ultimate goal of detecting mm-scale arsenic precipitates that form with annealing using BEEM was not successful. Precipitates were imaged with atomic force microscopy, but these same precipitates are not seen with BEEM under some conditions.