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Reactivity of group IV (100) semiconductor surfaces towards organic compounds

Posted on:2003-11-17Degree:Ph.DType:Dissertation
University:Stanford UniversityCandidate:Wang, George TFull Text:PDF
GTID:1461390011979386Subject:Engineering
Abstract/Summary:
The reactions of simple and multifunctional organic compounds with the clean silicon, germanium, and diamond (100)-2 x 1 semiconductor surfaces have been investigated using a combination of multiple internal reflection infrared spectroscopy and quantum chemistry density functional theory calculations. From these studies, an improved understanding of the atomic level reactivity of these semiconductor surfaces has been obtained, along with insights into how to achieve their selective coupling with organics of desired and varied functionality.; In addition to the Si(100) and Ge(100) surfaces, our results show that cycloaddition chemistry can also be extended to the diamond (100) surface. At room temperature, 1,3-butadiene was found to form a Diels-Alder product with the diamond (100) surface, as evidenced by isotopic substitution experiments and comparison of the surface adduct with its direct molecular analogue, cyclohexene.; The reactions of other classes of molecules in addition to alkenes on the Si(100) and Ge(100) surfaces, including a series of five-membered cyclic amines, were also examined. For tertiary aliphatic amines on Si(100) and both secondary and tertiary aliphatic amines on Ge(100), a majority of the molecules were observed to become stably trapped in dative-bonded precursor states rather than form energetically favorable dissociation products. For pyrrole, aromaticity was found to play a defining role in its reactivity, and a comparison of its molecular and surface reactivity reveals interesting similarities.; To probe the factors controlling the selectivity of organic reactions on clean semiconductor surfaces, the adsorption of acetone and a series of unsaturated ketones was also investigated. The reaction of acetone on Ge(100) was found to be under thermodynamic control at room temperature, resulting in the formation of an “ene” product rather than the kinetically favored [2+2] C=O cycloaddition product previously observed on the Si(100) surface. In contrast to the silicon and diamond surfaces, thermodynamic control on the germanium surface is facilitated by the reversibility of weak adsorption. For the unsaturated ketones, enhanced selectivity on Ge(100) in comparison with Si(100) was observed. The results can be explained by differences between the two surfaces in both thermodynamic and kinetic factors, and suggest that germanium may be a superior material for selective organic functionalization.
Keywords/Search Tags:Surfaces, Organic, Germanium, Reactivity, Diamond
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