| An interesting new numerical analysis technique is used to simulate boron diffusion and the effects of cluster evolution and Ostwald ripening on junction depth. This technique allows simulation of free interstitials and self-interstitials in clusters during the thermal annealing cycle of ion implanted silicon. The concentration of these defects is calculated dynamically during temperature ramping, temperature stabilization, and thermal annealing allowing processes to be designed for specific results.; Valuable contributions have been made by Dr. William Frensley to this research in the formulation of the new numerical analysis technique used and by Dr. Amitabh Jain in the basic physical understanding of defect diffusion and behavior. Original research by the student includes development of the algorithm and implementation of the numerical analysis technique to a model which results in new insights into transient enhanced diffusion, cluster evolution, and Ostwald ripening during the thermal annealing process rather than at the end of the process. |
