| This dissertation describes the development of a new amorphous network model using nanoscale proto-crystallites and an extremely high density of low energy twin-like boundaries separated by a few Angstroms. This near-crystal random network model replicates the measured amorphous silicon radial distribution function, and atomic density. Impurity species and hydrogen occupy the quasi-crystalline boundaries nearly strain free. One of the most important aspects of this model is that it renders the difficult problem of nucleation and grain growth in an amorphous silicon network tractable. The model is used to probe several aspects of amorphous silicon solid phase epitaxial growth including: lateral grain growth, interface effects, and bulk nucleation effects. Additionally, the model provides a theoretical backdrop for the proposed development of various hydrogenated amorphous silicon based photonic devices. |
