| t is a challenge to fabricate high-throughput, low-resistivity, low-leakage sub-80 nm junctions for MOSFET source and drain regions.;Plasma immersion ion implantation (PIII) is an emerging technology which can provide high dose-rate, low energy implantation. Shallow junctions are formed using 4-12 kV SiF;The study of BF;BF;Junctions are also formed using epitaxial cobalt disilicide as a dopant source for boron. Epitaxial CoSi;As ultra-shallow junction diodes with low surface concentration are observed to exhibit thermionic leakage current after short-time annealing, the crossover point between Schottky-like diodes that exhibit thermionic emission leakage and pn junctions which exhibit generation leakage current has been studied. The crossover is a volatile function of the first spatial moment of the doping profile, and is found to occur generally at junction depths on the order of 20-40 nm for... |
