Luminescence Properties And Mechanisms Of Silicon Self-Ton Implantation Into SOI In Different Implantation And Annealing Conditions

Photoelectron-Microelectronics integration is the most critical component of the semiconductor industry.However,the indirect band gap of Si has low radiation recombination efficiency,which limits the application of Si in photoelectric industry.Ion implantation is one of the main methods to improve Si luminescence performance due to its mature process,the variety of defects produced,and the stability of luminescence.Silicon-ion implanted silicon material does not introduce heterogeneous ions,but only produces defective light-emitting centers(gaps or vacant clusters)that are easily regulated.The ion implanted Si material can theoretically obtain the high density of the self-interstitial luminescence center by forming the gap type defect in the crystal.SOI materials are favored in the semiconductor industry because of their unique structure and excellent electrical properties.Therefore,it will bring great prospect for future development of semiconductor industry to introduce defect luminescence center into SOI material,realize chip optical interconnection and match existing CMOS production technology.This paper discusses and studies the luminescence characteristics and mechanism of the self-ion implanted SOI luminescent material through the design of different ion implantation schemes and the control parameters of the annealing process,confirms the origin of some luminous peaks from the visible band to the infrared band,and the reason of the luminous behavior change at different temperatures,the evolution mechanism of the gap defects of SOI materials injected with different doses was clarified.The main contents of the paper are as follows:1.Study on the luminescence properties and mechanism of SOI substrates implanted with silicon ions The PL spectra were studied by 130 KeV Silicon self-ion implanted SOI substrate with annealing process.The variation of the luminescence behavior of the W line in the SOI specimen was discussed.The variation trend of PL and the same temperature-related intensity of I1 and I2 peaks indicate that the luminous centers of these two peaks originate from the same gap clusters.The peaks near the 1.762 eV in the visible band can be attributed to the silicon nanocrystals luminescence.The luminescence origins of the 2.123 eV and 2.174 eV P2 and P3 peaks were obtained by ESR analysis,which was formed by the interaction of the weak oxygen bond center and the neutral oxygen vacancy center and the E'center.2.Energy decrement multiple self-ion implantation study on the luminescence phenomenon of top silicon in SOI materials by injecting silicon ions into SOI materials with multiple energy decrement,and then back-fire process with different parameters,the luminous peaks of infrared bands are abundant.Because of the diffusion behavior of the gap ions during the annealing process,the single energy injected SOI material can obtain many kinds of luminous centers.While the multiple energy injection specimens are overlapped by the gap ion diffusion between different injection layers at higher annealing temperatures,the defect of larger density is obtained,under the mechanism of"diffusion-maturation",these defects gather to form the gap clusters with average but large size,and because of the quantum size effect,the luminous peak position moves toward the infrared direction.